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LFUSCD10065A PDF预览

LFUSCD10065A

更新时间: 2024-11-16 20:07:51
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网功效光电二极管
页数 文件大小 规格书
4页 576K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 650V V(RRM), Silicon Carbide, TO-220AC, TO-220, 2 PIN

LFUSCD10065A 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PSFM-T2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:8.27其他特性:PD-CASE
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON CARBIDE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.7 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:75 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:125 W最大重复峰值反向电压:650 V
最大反向电流:250 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

LFUSCD10065A 数据手册

 浏览型号LFUSCD10065A的Datasheet PDF文件第2页浏览型号LFUSCD10065A的Datasheet PDF文件第3页浏览型号LFUSCD10065A的Datasheet PDF文件第4页 
SiC Schottky Diode  
LFUSCD10065A, 650V, 10 A,TO-220 2-lead  
RoHS  
Pb  
LFUSCD10065A  
Description  
The LFUSCD series of silicon carbide (SiC) Schottky di-  
odes has near-zero recovery current, high surge capability,  
and a maximum operating junction temperature of 175 °C.  
The diode series is ideal for applications where improve-  
ments in efficiency, reliability, and thermal management  
are desired.  
Features  
• Positive temperature  
coefficient for safe  
operation and ease of  
paralleling  
• Extremely fast,  
temperature-independent  
switching behavior  
• Dramatically reduced  
switching losses  
compared to Si bipolar  
diodes  
• 175 °C maximum  
operating junction  
temperature  
• Enhanced surge capability  
Circuit Diagram  
Applications  
1
Case  
• Boost diodes in power  
factor correction  
• Uninterruptible power  
supplies  
• Switch-mode power  
supplies  
• Solar inverters  
• Industrial motor drives  
1
2
1
2
Maximum Ratings  
Characteristics  
Symbol  
Conditions  
Max.  
Unit  
DC Blocking Voltage  
650  
650  
V
VR  
-
Repetitive Peak Reverse Voltage, Tj  
= 25 °C  
V
V
A
VRRM  
VRSM  
IF  
Surge Peak Reverse Voltage  
650  
10  
Maximum DC Forward Current  
TC = 147 °C  
Non-Repetitive Forward Surge  
Current  
75  
455  
84  
A
A
IFSM  
IF,MAX  
EAS  
TC = 25 °C, 8.3 ms, half sine pulse  
Non-Repetitive Peak Forward Current  
Non-Repetitive Avalanche Energy  
TC = 25 °C, 10 µS  
Tj = 25 °C, L = 5 mH, Ipk = 5.5A,  
VDD = 100 V  
mJ  
125  
23  
TC = 25 °C  
TC = 147 °C  
Power Dissipation  
W
°C  
°C  
PTot  
TJ,MAX  
TSTG  
Maximum Operating Junction  
Temperature  
175  
StorageTemperature  
-55 to 175  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 10/05/16  

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