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LF355BN PDF预览

LF355BN

更新时间: 2024-11-03 22:47:11
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
23页 1080K
描述
Series Monolithic JFET Input Operational Amplifiers

LF355BN 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:DIP, DIP8,.3
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.83放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.0001 µA
最小共模抑制比:85 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电压:6500 µV
JESD-30 代码:R-PDIP-T8JESD-609代码:e0
长度:9.817 mm低-偏置:YES
低-失调:NO负供电电压上限:-22 V
标称负供电电压 (Vsup):-20 V功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP8,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15/+-20 V
认证状态:Not Qualified座面最大高度:5.08 mm
标称压摆率:5 V/us子类别:Operational Amplifiers
最大压摆率:4 mA供电电压上限:22 V
标称供电电压 (Vsup):20 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:2500 kHz
最小电压增益:25000宽度:7.62 mm

LF355BN 数据手册

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December 2001  
LF155/LF156/LF256/LF257/LF355/LF356/LF357  
JFET Input Operational Amplifiers  
n Logarithmic amplifiers  
n Photocell amplifiers  
These are the first monolithic JFET input operational ampli-  
n Sample and Hold circuits  
General Description  
fiers to incorporate well matched, high voltage JFETs on the  
Common Features  
same chip with standard bipolar transistors (BI-FET Tech-  
nology). These amplifiers feature low input bias and offset  
currents/low offset voltage and offset voltage drift, coupled  
with offset adjust which does not degrade drift or  
common-mode rejection. The devices are also designed for  
high slew rate, wide bandwidth, extremely fast settling time,  
low voltage and current noise and a low 1/f noise corner.  
n Low input bias current: 30pA  
n Low Input Offset Current: 3pA  
n High input impedance: 1012Ω  
n Low input noise current:  
n High common-mode rejection ratio: 100 dB  
n Large dc voltage gain: 106 dB  
Features  
Advantages  
Uncommon Features  
n Replace expensive hybrid and module FET op amps  
n Rugged JFETs allow blow-out free handling compared  
with MOSFET input devices  
n Excellent for low noise applications using either high or  
low source impedancevery low 1/f corner  
n Offset adjust does not degrade drift or common-mode  
rejection as in most monolithic amplifiers  
n New output stage allows use of large capacitive loads  
(5,000 pF) without stability problems  
LF155/ LF156/ LF257/  
Units  
LF355  
LF256/  
LF356  
1.5  
LF357  
(AV=5)  
1.5  
j
Extremely  
fast settling  
time to  
4
µs  
0.01%  
j
j
j
Fast slew  
rate  
5
12  
5
50  
20  
12  
V/µs  
MHz  
n Internal compensation and large differential input voltage  
capability  
Wide gain  
bandwidth  
Low input  
noise  
2.5  
20  
Applications  
n Precision high speed integrators  
n Fast D/A and A/D converters  
n High impedance buffers  
12  
voltage  
n Wideband, low noise, low drift amplifiers  
Simplified Schematic  
00564601  
*
3pF in LF357 series.  
BI-FET , BI-FET II are trademarks of National Semiconductor Corporation.  
© 2001 National Semiconductor Corporation  
DS005646  
www.national.com  

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