Datasheet > LD57100J105R

LD57100J105R

更新时间： 2022-05-14 22:22:32

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
21页	1369K
描述
1 A ultra low-dropout LDO with bias

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数据手册

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LD57100J105R 数据手册

LD57100

Electrical characteristics

Symbol

Parameter

Test conditions

= 5.5 V

Min.

Typ.

Max.

Unit

= V

EN BIAS

Enable pin input current

0.2

µA

From assertion of V to V

OUT

Turn-on time

160

µs

98% V

, V

= 1.0 V

OUT(NOM)

= V

+ 0.5 V +/- V

OUT(NOM) RIPPLE

supply voltage

SVR

= 0.2 V; freq=1 kHz

IN-ADJ

RIPPLE

rejection (adj version)

= 10 mA; V

= 1.0 V

OUT(NOM)

OUT

= 3.0 V +/- V

BIAS

RIPPLE

= 0.2 V; freq=1 kHz;

RIPPLE

supply voltage

BIAS

SVR

BIAS-ADJ

rejection (adj version)

= V

+ 0.5 V

OUT(NOM)

= 10 mA; V

= 1.0 V

OUT

OUT(NOM)

35 x

= V

+ 0.5 V; V

= 1.0 V;

Output noise voltage

(adj version)

OUT(NOM)

µV

RMS

OUT

N-ADJ

10 Hz to 100 kHz, I

= 1 mA

OUT

REF

= V

+ 0.5 V +/- V

OUT(NOM) RIPPLE

VIN supply voltage

rejection (adj version)

SVR

= 0.2 V; freq=1 kHz

IN-FIX

RIPPLE

OUT

= 10 mA; V

= 1.8 V

OUT(NOM)

= 4.0 V +/- V

RIPPLE

BIAS

supply voltage

= 0.2 V; freq=1 kHz;

RIPPLE

SVR

rejection (fixed

versions)

BIAS-FIX

= V

+ 0.5 V

OUT(NOM)

= 10 mA; V

= 1.8 V

OUT

OUT(NOM)

= V

+ 0.5 V; V

= 1.0 V;

Output noise voltage

(fixed versions)

OUT(NOM)

N-FIX

µV

RMS

10 Hz to 100 kHz, I

= 1 mA

OUT

Output voltage

discharge MOSFET

150

Ω

Thermal shutdown

Hysteresis

160

°C

SHDN

1. Not applicable to fixed versions with V

< 2.0 V.

OUT(NOM)

DS13123 - Rev 5

page 7/21

1...4 5 678 9 10...21

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