是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-13 |
包装说明: | O-MALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.2 |
Is Samacsys: | N | 其他特性: | LOW CAPACITANCE |
最大击穿电压: | 55.3 V | 最小击穿电压: | 50 V |
击穿电压标称值: | 50 V | 外壳连接: | CATHODE |
最大钳位电压: | 72.7 V | 配置: | SINGLE |
最小二极管电容: | 100 pF | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-202AA |
JESD-30 代码: | O-MALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 45 V | 最大反向电流: | 5 µA |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | TIN LEAD |
端子形式: | WIRE | 端子位置: | AXIAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1N5650A | LITTELFUSE |
类似代替 |
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors | |
1N5650A | MICROSEMI |
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TRANSIENT ABSORPTION ZENER | |
1N5650 | LITTELFUSE |
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Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors |
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