Datasheet > LC321667BJ-80

LC321667BJ-80

更新时间： 2024-11-20 23:45:27

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器
页数	文件大小	规格书
31页	1009K
描述
x16 EDO Page Mode DRAM

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中文翻译

获取价格

数据手册

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LC321667BJ-80 数据手册

Ordering number : EN*5083

CMOS LSI

LC321667BJ, BM, BT-70/80

1 MEG (65536 Words × 16 Bits) DRAM

EDO Page Mode Byte Write

Preliminary

• 4 ms refresh using 256 refresh cycles.

• Supports RAS-only refresh, CAS-before-RAS refresh

and hidden refresh.

Overview

The LC321667BJ series is a CMOS dynamic RAM

operating on a single 5 V power source and having a

65536 words × 16 bits configuration. Equipped with large

capacity capabilities, high speed transfer rates and low

power dissipation, this series is suited for a wide variety of

applications ranging from computer main memory and

expansion memory to commercial equipment.

Address input utilizes a multiplexed address bus which

permits it to be enclosed in a compact plastic package of

40-pin SOJ. Refresh rates are within 4 ms with 256 row

address (A0 to A7) selection and support Row Address

Strobe (RAS)-only refresh, Column Address Strobe

(CAS)-before-RAS refresh and hidden refresh settings.

There are functions such as Extended Data Out (EDO)

page mode, read-modify-write and byte write.

• Packages

SOJ 40-pin plastic package (400 mil): LC321667BJ

SOP 40-pin plastic package (525 mil): LC321667BM

TSOP 44-pin plastic package (400 mil): LC321667BT

• RAS access time/column address access time/CAS

access time/cycle time/power dissipation.

Package Dimensions

unit: mm

3200-SOJ40 II

[LC321667BJ]

Features

• 65536 words × 16 bits configuration.

• Single 5 V ± 10% power supply.

• All input and output (I/O) TTL compatible.

• Supports EDO page mode, read-modify-write and byte

write.

• Supports output buffer control using early write and

Output Enable (OE) control.

SANYO: SOJ40 II

Parameter

RAS access time

LC321667BJ, BM, BT-70

LC321667BJ, BM, BT-80

70 ns

40 ns

80 ns

45 ns

Column address access time

CAS access time

25 ns

Cycle time

125 ns

688 mW

135 ns

633 mW

During operation

Power consumption (max)

During standby

5.5 mW (CMOS level)/11 mW (TTL level)

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

40695TH (OT) No. 5083-1/31

12 3 4 5 6 7...31

中文翻译

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与LC321667BJ-80相关器件

型号	品牌	获取价格	描述	数据表
LC321667BM	SANYO	获取价格	1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write
LC321667BM-70	SANYO	获取价格
LC321667BM-80	ETC	获取价格	x16 EDO Page Mode DRAM
LC321667BT	ETC	获取价格
LC321667BT-70	SANYO	获取价格	1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write
LC321667BT-80	SANYO	获取价格	1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write
LC321667CJ-25	ETC	获取价格
LC321667CJ-30	ETC	获取价格
LC321667CT-25	ETC	获取价格
LC321667CT-30	ETC	获取价格

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