Datasheet > LC24E3TR

LC24E3TR

更新时间： 2024-11-20 19:59:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	189K
描述
Trans Voltage Suppressor Diode, 1500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, ROHS COMPLIANT, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

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LC24E3TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-13
包装说明：	O-MALF-W2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.21
最大击穿电压：	32.6 V	最小击穿电压：	26.7 V
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-202AA	JESD-30 代码：	O-MALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	1 W
最大重复峰值反向电压：	24 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	PURE MATTE TIN
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

LC24E3TR 数据手册

LC6.5 thru LC170A, e3

1500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This hermetically sealed Transient Voltage Suppressor (TVS) product family

includes a rectifier diode element in series and opposite direction to achieve low

capacitance performance below 100 pF (see Figure 2). The low level of TVS

capacitance may be used for protecting higher frequency applications in inductive

switching environments or electrical systems involving secondary lightning effects

per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne

avionics. With virtually instantaneous response, they also protect from ESD and

EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability is

required, two of these low capacitance TVS devices may be used in parallel in

DO-13

(DO-202AA)

opposite directions (anti-parallel) for complete ac protection as shown in Figure 4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS series for flexible

thru-hole mounting (for bidirectional see Figure 4)

•

Protection from switching transients and induced RF

Low capacitance for data line protection up to 1 MHz

Suppresses transients up to 1500 watts @ 10/1000 µs

(see Figure 1)*

Protection for aircraft fast data rate lines up to Level 5

Waveform 4 and Level 2 Waveform 5A in RTCA/DO-

160D (also see MicroNote 130) & ARINC 429 with bit

rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)

•

Clamps transient in less than 100 pico seconds

Working voltage (V_WM) range 6.5 V to 170 V

Hermetic sealed DO-13 metal package

•

ESD & EFT protection per IEC 61000-4-2 and -4-4

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: LC6.5 to LC170A

Class 2: LC6.5 to LC150A

Class 3: LC6.5 to LC70A

Class 4: LC6.5 to LC36A

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are also

available by adding MQ, MX, MV, MSP prefixes

respectively to part numbers, e.g. MXLC6.5A, etc.

•

Surface mount equivalent packages also available as

SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -

SMCGLCE170A in separate data sheet (consult factory

for other surface mount options)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1 : LC6.5 to LC90A

Class 2: LC6.5 to LC45 A

Class 3: LC6.5 to LC22A

Class 4: LC6.5 to LC11A

•

Plastic axial-leaded equivalents available in the LCE6.5

- LCE170A series in separate data sheet

RoHS Compliant devices available by adding “e3” suffix

•

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: LC6.5 to LC20A

Class 3: LC6.5 to LC10A

Inherently radiation hard per Microsemi MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• 1500 Watts at 10/1000 μs with repetition rate of 0.01% or

•

CASE: DO-13 (DO-202AA), welded, hermetically

sealed metal and glass

less* at lead temperature (T_L) 25^oC (see Figs. 1, 2, & 4)

• Operating & Storage Temperatures: -65^oto +175^oC

•

FINISH: All external metal surfaces are Tin-Lead

plated and solderable per MIL-STD-750 method 2026

• THERMAL RESISTANCE: 50^oC/W (Typical) junction to

lead at 0.375 inches (10 mm) from body or 110 ^oC/W

junction to ambient when mounted on FR4 PC board with

4 mm²copper pads (1 oz) and track width 1 mm, length

25 mm

POLARITY: Cathode connected to case as shown by

diode symbol (cathode positive for normal operation)

•

MARKING: Part number and polarity diode symbol

WEIGHT: 1.4 grams. (Approx)

• DC Power Dissipation*: 1 Watt at T_L< +125^oC 3/8” (10

mm) from body (see derating in Fig 3 and note below)

• Solder Temperatures: 260 ^oC for 10 s (maximum)

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

•

See package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients that briefly

drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak

pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

10-29-2008 REV E

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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