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LA6602V PDF预览

LA6602V

更新时间: 2024-11-29 22:47:19
品牌 Logo 应用领域
三洋 - SANYO 驱动器
页数 文件大小 规格书
6页 90K
描述
I-V Amplifier for MiniDisc Drives

LA6602V 数据手册

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Ordering number : EN5307A  
Monolithic Linear IC  
LA6602V  
I-V Amplifier for MiniDisc Drives  
Features  
Package Dimension  
• The LA6602V is optimal as an interface IC between the  
PD and servo ICs used in MD PU modules.  
• Eight buffer amplifier channels  
unit: mm  
3175A-SSOP24  
[LA6602V]  
• On-chip low-noise high-bandwidth amplifier RF block  
Specifications  
Maximum Ratings at Ta = 25°C  
SANYO: SSOP24  
Parameter  
Maximum supply voltage  
Symbol  
Conditions  
Ratings  
13.0  
Unit  
V
V
CC max  
Pd max  
Topr  
Allowable power dissipation  
Operating temperature  
Storage temperature  
Independent IC  
300  
–30 to +80  
–40 to +125  
mW  
°C  
Tstg  
°C  
Operating Conditions at Ta = 25°C  
Parameter  
Symbol  
VCC  
Conditions  
Ratings  
Unit  
V
Supply voltage  
3.6 to 12.0  
Operating Characteristics at Ta = 25°C, V /V = ± 2.5 V  
CC  
EE  
Ratings  
typ  
10  
Parameter  
Symbol  
ICCO  
Conditions  
Unit  
mA  
min  
max  
20  
Quiescent current  
See Figure 1.  
See Figure 2.  
5
[Amplifiers A through D]  
Output offset voltage  
VIO  
2
7
mV  
V
Maximum output voltage  
Minimum output voltage  
Gain-bandwidth product  
[Amplifiers E and F]  
V
O max RL = 4.7 k, VIN = –1 V See Figure 3.  
O min RL = 4.7 k, VIN = +1 V See Figure 4.  
2.0  
0.5  
V
–2.0  
V
fT  
20 [dB] amp GV = 0 [dB] See Figure 4.  
0.7  
2
MHz  
Output offset voltage  
VIO  
See Figure 2.  
7
mV  
V
Maximum output voltage  
Minimum output voltage  
Gain-bandwidth product  
[Amplifiers I and J]  
VO max RL = 4.7 k, VIN = –1 V See Figure 3.  
2.0  
0.5  
VO min RL = 4.7 k, VIN = +1 V See Figure 4.  
–2.0  
V
fT  
20 [dB] amp GV = 0 [dB] See Figure 4.  
See Figure 2.  
0.7  
MHz  
Output offset voltage  
VIO  
20  
3
50  
7
mV  
mV  
V
Output offset voltage difference  
Maximum output voltage  
Minimum output voltage  
Gain-bandwidth product  
VIO I-J  
V
O max RL = 2 k, VIN = –1 V See Figure 3.  
O min RL = 2 k, VIN = +1 V See Figure 4.  
fT 20 [dB] amp GV = 0 [dB] See Figure 4.  
1.5  
6
V
–1.5  
V
8
MHz  
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN  
63097HA(OT) No. 5307-1/6  

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