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LA1150N PDF预览

LA1150N

更新时间: 2024-11-24 22:31:35
品牌 Logo 应用领域
三洋 - SANYO 商用集成电路放大器
页数 文件大小 规格书
5页 222K
描述
FM IF Amplifier for Car Radio

LA1150N 技术参数

生命周期:Obsolete零件包装代码:SIP
包装说明:SIP,针数:8
Reach Compliance Code:unknown风险等级:5.83
Is Samacsys:N商用集成电路类型:AUDIO DEMODULATOR
解调类型:FM谐波失真:0.2%
JESD-30 代码:R-PSIP-T8长度:22.3 mm
功能数量:1端子数量:8
最高工作温度:80 °C最低工作温度:-20 °C
标称输出电压(调频):500 mV封装主体材料:PLASTIC/EPOXY
封装代码:SIP封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
信噪比Nom(FM):80 dB最大压摆率:15 mA
最大供电电压 (Vsup):12 V最小供电电压 (Vsup):12 V
表面贴装:NO技术:BIPOLAR
温度等级:COMMERCIAL EXTENDED端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:SINGLE
宽度:3 mmBase Number Matches:1

LA1150N 数据手册

 浏览型号LA1150N的Datasheet PDF文件第2页浏览型号LA1150N的Datasheet PDF文件第3页浏览型号LA1150N的Datasheet PDF文件第4页浏览型号LA1150N的Datasheet PDF文件第5页 
Ordering number : EN507F  
Monolithic Linear IC  
LA1150N  
FM IF Amplifier for Car Radio  
Functions  
• 3 stage differential IF amplifier.  
Package Dimensions  
unit: mm  
• Differential peak detector.  
3060-SIP8  
[LA1150N]  
Features  
• Easy adjustment.  
• Large output voltage.  
• Good limiter characteristic.  
• Wide operating voltage.  
• Low distortion.  
• Fewer peripheral parts.  
• Excellent AM rejection ratio.  
SANYO: SIP8  
Specifications  
Maximum Ratings at Ta=25°C  
Parameter  
Maximum supply voltage  
Input voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
max  
16  
0.7  
CC  
mVrms  
mW  
°C  
IN  
Allowable power dissipation  
Operating temperature  
Storage temperature  
Pd max  
Topr  
*400  
–20 to +80  
Tstg  
–40 to +125  
°C  
* Derate 4mW/°C above Ta=25°C  
Operating Condition at Ta=25°C  
Parameter  
Symbol  
Conditions  
Ratings  
12  
Unit  
V
Recommended supply voltage  
V
CC  
Operating Characteristics at Ta=25°C, V =12V, f=10.7MHz, f =400Hz 100% mod.  
CC  
M
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
8
typ  
max  
15  
Current dissipation  
DC voltage at pin 7  
Demodulated output  
Input limiting voltage  
Total harmonic distortion  
Signal to noise ratio  
AM rejection ratio  
I
12  
mA  
V
CC  
V
V
V
3.7  
400  
4.4  
500  
50  
5.2  
7
V
=80dBµV  
600 mVrms  
55 dBµV  
o
IN  
–3dB limiting  
IN(lim)  
THD  
S/N  
V
V
=80dBµV  
=80dBµV  
0.2  
80  
0.3  
9.5  
%
IN  
70  
47  
dB  
dB  
k  
IN  
AMR  
AM 1kHz 30% mod  
f=400Hz  
53  
Output resistance  
r
6.2  
7.7  
o
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN  
91297HA (KT)/2118KI/5085MW/3113KI, TS No.507-1/5  

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