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L9418-07 PDF预览

L9418-07

更新时间: 2024-01-15 08:10:01
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
2页 105K
描述
Laser Diode, 980nm

L9418-07 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.61其他特性:HIGH STABILITY
配置:SINGLE功能数量:1
最高工作温度:30 °C最低工作温度:
光电设备类型:LASER DIODE标称输出功率:1000 mW
峰值波长:980 nm最大阈值电流:240 mA
Base Number Matches:1

L9418-07 数据手册

 浏览型号L9418-07的Datasheet PDF文件第2页 
CW LASER DIODES  
L9418 SERIES  
PRELIMINARY DATA  
Peak Emission Wavelength 980nm, Radiant Output Power 1W (CW)  
FEATURES  
Radiant output power (CW) : 1W  
Peak Emission Wavelength : 980 nm ± 3 nm  
Beam Area Size : 100 µm x 1 µm  
High stability  
Long life  
Compact  
APPLICATIONS  
Medical instrument  
Measuring instrument  
Pumping source for solid state lasers (EDFA)  
L941804, L941807, L941806  
OUTLINE  
A 980nm 1W Laser Diode has joined in the range of HAMAMATSU PHOTONICS’s Single Chip Laser  
Diode. Emittinig area size of L9418 series is 100um, it makes easier to focus on to a small spot with  
optics. Therefore, it can be used for various applications such as medical instruments, measuring  
instruments, communication etc.  
ABSOLUTE MAXIMUM RATINGS (Top(c) = 25 °C)  
Unit  
W
A
Parameter  
Radiant Output Power  
Forward Current  
Value  
1.2  
1.4  
Symbol  
Φ
e
I
f
Reverse Voltage  
2
V
r
V
0~+30  
30~+80  
Operating Temperature  
Storage Temperature  
T
T
°C  
°C  
op(c)  
stg  
CHARACTERISTICS (Top(c) = 25 °C)  
Parameter  
Radiant Output Power  
Operating Current  
Peak Emission Wavelength  
Spectral Radiation Half Bandwidth  
Forward Voltage  
Symbol  
Conditions  
I = 1.2 A  
f
Unit  
W
A
nm  
nm  
Value  
1 (Typ. )  
1.2 (Typ. )  
980 ± ±3  
2 (Typ. )  
1.6 (Typ. )  
8
32  
100 x 1  
0.24  
Φ
e
I
op  
λ
p
Φ = 1 W  
e
∆λ  
V
V
f
degree  
degree  
µm  
θ
Parallel  
Vertical  
Emitting Area Size  
//  
Beam Spread Angle  
Φ = 1 W  
FWHM  
e
θ
th  
Value at designing  
I
Lasing Threshold Current  
A
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies  
or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '200  
3 Hamamatsu Photonics K.K.  

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