Datasheet > L7833S

L7833S

更新时间： 2024-01-12 21:47:00

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	266K
描述
HEXFETPower MOSFET

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中文翻译

获取价格

数据手册

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L7833S 数据手册

PD - 94668B

IRL7833

IRL7833S

IRL7833L

HEXFET^®Power MOSFET

Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification

for Telecom and Consumer Use

V_DSSR_DS(on)max

32nC

3.8m

30V

Benefits

l Very Low RDS(on) at 4.5V V_GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

D²Pak

IRL7833S

TO-262

IRL7833L

TO-220AB

IRL7833

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

150

110

600

@ T_C= 25°C

@ T_C= 100°C

Maximum Power Dissipation

@T_C= 25°C

@T_C= 100°C

140

Linear Derating Factor

Operating Junction and

0.96

W/°C

°C

-55 to + 175

Storage Temperature Range

STG

Mounting Torque, 6-32 or M3 screw

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

Max.

1.04

–––

Units

R_θ

Junction-to-Case

–––

0.50

–––

Case-to-Sink, Flat, Greased Surface

°C/W

Junction-to-Ambient

Junction-to-Ambient (PCB Mount)

Notes through are on page 12

www.irf.com

4/22/04

12 3 4 5 6 7...12

中文翻译

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