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L6690 PDF预览

L6690

更新时间: 2024-11-28 22:19:47
品牌 Logo 应用领域
HAMAMATSU 二极管激光二极管脉冲
页数 文件大小 规格书
2页 95K
描述
INFRARED PULSED LASER DIODE

L6690 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.61
配置:SINGLE WITH BUILT-IN PHOTO DIODE功能数量:1
最高工作温度:80 °C最低工作温度:-35 °C
光电设备类型:LASER DIODE峰值波长:870 nm
形状:ROUND尺寸:2.8 mm
Base Number Matches:1

L6690 数据手册

 浏览型号L6690的Datasheet PDF文件第2页 
INFRARED PULSED LASER DIODE  
L6690  
FEATURES  
High duty ratio (DR2.5%)  
High speed rise time (tr=0.5 ns typ.)  
APPLICATIONS  
Laser rader  
Range finder  
Excitation light source  
Optical trigger  
Security barrier  
Figure 1: Dimensional Outline (Unit: mm)  
+0  
Glass Window  
9.0  
-0.1  
5.7 ± 0.2  
2.8 ± 0.3  
LD Chip  
ABSOLUTE MAXIMUM RATINGS  
0.45  
Symbol  
Parameter  
Value  
Unit  
A
2.54  
IFP  
Pulsed Foward Current  
3
Side View  
VR  
Reverse Voltage  
2
3
V
(Pin Connection)  
1.0  
φep  
tw  
Pulsed Radiant Output Power  
Pulse Duration (FWHM)  
Duty Ratio  
W
Common to Case  
130  
ns  
PD  
LD  
DR  
2.5  
%
Top  
Operating Temperature  
Storage Temperature  
-35 to +80  
-40 to +85  
℃�  
℃�  
LD Cathode  
PD Anode  
Tstg  
LD Cathode  
PD Anode  
Bottom View  
Common to Case  
ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25)  
Symbol�  
φep  
Min.  
Unit  
Condition�  
Max.  
Parameter  
Typ.  
-
1.8  
W
nm  
IFP=2.5A  
-
-
Pulsed Radiant Power  
Peak Emission Wavelength  
Spectral Radiation Half Bandwidth  
Forward Voltage  
λp  
-
-
870  
3
Δλ�  
VF  
nm  
FWHM  
-
-
V
IFP=2.5A  
-
2.7  
0.5  
8
tr  
Rise Time  
-
ns  
-
θ//�  
θ⊥�  
Ith  
Beam Spread Angle : Parallel  
: Vertical  
6
27  
-
degree  
degree  
A
FWHM  
10  
33  
-
IFP=2.5A  
30  
Lasing Threshold Current  
Monitor PD Current  
0.5  
0.25  
Im  
mA  
-
IFP=2.5A  
-
Note: General operating conditionφep2 W, tw100 ns, Repetition frequency100 kHz  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
C
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.1998 Hamamatsu Photonics K.K.  

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