Datasheet > KU034N08P

KU034N08P

更新时间： 2024-11-18 12:30:55

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	1034K
描述
N-ch Trench MOS FET

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中文翻译

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KU034N08P 数据手册

KU034N08P

N-ch Trench MOS FET

SEMICONDUCTOR

TECHNICAL DATA

General Description

This Trench MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for DC/DC Converter,

Synchronous Rectification and a load switch in battery powered

applications

FEATURES

· V_DSS= 75V, I_D= 170A

· Drain-Source ON Resistance :

R_DS(ON)=3.4mΩ (Max.) @V_GS= 10V

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

±20

170*

106

I_D

Drain Current

@T_C=100℃

I_DP

Pulsed (Note1)

424*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

1,000

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

192

1.54

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55 ~ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

0.65

62.5

℃/W

Thermal Resistance,

Junction-to-Ambient

* : Drain current limited by maximum junction temperature.

Calculated continuous Current based on maximum allowable junction temperature

PIN CONNECTION

2012. 5. 14

Revision No : 0

1/7

12 3 4 5 6 7

中文翻译

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