KST24
VHF Mixer Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
40
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
30
V
CEO
EBO
4
V
I
100
350
150
357
mA
mW
°C
C
P
Collector Power Dissipation
Storage Temperature
C
T
STG
R
(j-a)
Thermal Resistance Junction to Ambient
°C/W
TH
• Refer to KSP24 for graphs
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
40
30
4
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I =100µA, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I =1mA, I =0
C B
I =10µA, I =0
V
E
C
I
V
=15V, I =0
50
nA
CBO
CB
CE
CE
E
h
DC Current Gain
V
V
=10V, I =8mA
30
FE
C
f
* Current Gain Bandwidth Product
=10V, I =8mA
400
620
MHz
pF
T
C
f=100MHz
C
Output Capacitance
V
=10V, I =0, f=1MHz
0.25
0.36
ob
CB
E
G
Conversion Gain (213MHz to 45MHz)
(60MHz to 45MHz)
I =8mA, V =20V
Oscillator Injection=150mV
19
24
24
29
dB
dB
G
C
CC
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Marking
3A
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002