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KSP2222ATF PDF预览

KSP2222ATF

更新时间: 2024-11-27 12:56:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管
页数 文件大小 规格书
3页 105K
描述
NPN General Purpose Amplifier

KSP2222ATF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.13
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):75
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):285 ns
最大开启时间(吨):35 nsBase Number Matches:1

KSP2222ATF 数据手册

 浏览型号KSP2222ATF的Datasheet PDF文件第2页浏览型号KSP2222ATF的Datasheet PDF文件第3页 
July 2006  
KSP2222A  
tm  
NPN General Purpose Amplifier  
Features  
Collector-Emitter Voltage: VCEO= 40V  
Collector Power Dissipation: PC (max)=625mW  
Available as PN2222A  
TO-92  
1
2 3  
1. Emitter 2. Base 3. Collector  
Absolute Maximum Ratings *  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
75  
Units  
V
VCBO  
Collector-Base Voltage  
VCEO  
VEBO  
IC  
TJ  
Tstg  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector current  
40  
V
6.0  
V
600  
+150  
mA  
°C  
°C  
Junction Temperature  
Storage Temperature  
-55 ~ +150  
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max  
625  
83.3  
200  
Units  
mW  
°C/W  
°C/W  
PC  
Collector Power Dissipation, by RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
RθJC  
RθJA  
Electrical Characteristics *  
T = 25°C unless otherwise noted  
a
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Test Condition  
IC = 10µA, IE = 0  
Min.  
75  
40  
Typ.  
Max.  
Units  
V
V
IE = 10µA, IC = 0  
VCB = 60V, IE = 0  
VEB = 3.0V, IC = 0  
6.0  
V
0.01  
10  
µA  
nA  
IEBO  
hFE  
VCE = 10V, IC = 0.1mA,  
VCE = 10V, IC = 1mA,  
VCE = 10V, IC = 10mA,  
VCE = 10V, IC = 150mA,  
VCE = 10V, IC = 500mA,  
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
IC = 150mA, IB = 15mA  
IC = 500mA, IB = 50mA  
IC = 20mA, VCE = 20V, f = 100MHz  
VCB = 10V, IE = 0, f = 1.0MHz  
VCC= 30V, IC = 150mA,  
IB1= 15mA, VBE(off)= 0.5V  
VCC= 30V, IC = 150mA,  
IB1= IB1 = 15mA  
35  
50  
75  
100  
40  
300  
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.3  
1
V
V
0.6  
1.2  
2.0  
V
V
fT  
Cobo  
tON  
Current Gain Bandwidth Product  
Output Capacitance  
300  
MHz  
pF  
ns  
8
Turn On Time  
35  
tOFF  
NF  
Turn Off Time  
Noise Figure  
285  
4
ns  
IC = 100µA, VCE= 10V,  
RS= 1K, f = 1.0KHz  
dB  
* DC Item are tested by Pulse Test : Pulse Width300us, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
KSP2222A Rev. B  
1
www.fairchildsemi.com  

KSP2222ATF 替代型号

型号 品牌 替代类型 描述 数据表
KSP2222ATA FAIRCHILD

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