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KSP20 PDF预览

KSP20

更新时间: 2024-11-27 19:46:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
4页 85K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-92

KSP20 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.92最大集电极电流 (IC):0.1 A
基于收集器的最大容量:0.65 pF集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):25
最高频带:VERY HIGH FREQUENCY BANDJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):620 MHz
Base Number Matches:1

KSP20 数据手册

 浏览型号KSP20的Datasheet PDF文件第2页浏览型号KSP20的Datasheet PDF文件第3页浏览型号KSP20的Datasheet PDF文件第4页 
KSP20  
NPN EPITAXIAL SILICON TRANSISTOR  
VHF TRANSISTOR  
TO-92  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
40  
30  
V
V
V
4.0  
100  
350  
2.81  
1.0  
8.0  
Collector Current  
mA  
mW  
Collector Dissipation (TA=25°C)  
Derate above 25°C  
PC  
mW/°C  
W
mW/°C  
°C  
°C  
°C/W  
°C/W  
Collector Dissipation (TA=25°C)  
Derate above 25°C  
Junction Temperature  
Storage Temperature  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
PC  
TJ  
TSTG  
Rth(j-c)  
Rth(j-a)  
150  
-55~150  
83.3  
1. Base 2. Emitter 3. Collector  
357  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
40  
30  
4.0  
Typ  
Max  
Unit  
IC=100mA, IE=0  
IC=1mA, IB=0  
IE=10mA, IC=0  
VCB=15V, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
BVCBO  
BVCEO  
BVEBO  
ICBO  
V
V
V
nA  
50  
VCE=10V, IC=4mA  
VCE=10V, IC=4mA  
f=100MHz  
DC Current Gain  
Current Gain Bandwidth Product  
hFE  
fT  
25  
400  
MHz  
620  
VCB=10V, IE=0, f=1MHz  
VCB=10V, IE=4mA  
f=31.8MHz  
CCB  
Cc·rbb´  
Collector-Base Capacitance  
Collector Base Time Constant  
pF  
ps  
0.65  
0.5  
10  
GCE  
VCE=10V, IC=4mA  
Oscillator injection=200mV  
Conversion Gain (213 to 45 MHz)  
18  
dB  
23  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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