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KSP12J05Z PDF预览

KSP12J05Z

更新时间: 2024-11-20 14:51:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体管
页数 文件大小 规格书
4页 32K
描述
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-92, 3 PIN

KSP12J05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:5.79配置:DARLINGTON
最小直流电流增益 (hFE):20000JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

KSP12J05Z 数据手册

 浏览型号KSP12J05Z的Datasheet PDF文件第2页浏览型号KSP12J05Z的Datasheet PDF文件第3页浏览型号KSP12J05Z的Datasheet PDF文件第4页 
KSP12  
Darlington Transistor  
Collector-Emitter Voltage: V  
Collector Power Dissipation: P (max)=625mW  
=20V  
CES  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
NPN Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
20  
Units  
V
V
V
P
Collector-Emitter Voltage  
Emitter-Base Voltage  
CES  
10  
V
EBO  
C
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
625  
mW  
°C  
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I =100µA, I =0  
20  
V
CES  
CBO  
C
B
I
I
I
V
=15V, I =0  
100  
100  
100  
nA  
nA  
nA  
CB  
CE  
EC  
CE  
E
V
V
V
=15V, I =0  
B
CES  
EBO  
=10V, I =0  
C
h
DC Current Gain  
=5V, I =10mA  
20K  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =10mA, I =0.01mA  
1
V
V
CE  
C
B
V
=5V, I =10mA  
1.4  
BE  
CE  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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