KSD288OTU PDF预览

KSD288OTU

更新时间: 2025-08-27 19:02:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 44K
描述
TRANS NPN 55V 3A TO-220

KSD288OTU 数据手册

 浏览型号KSD288OTU的Datasheet PDF文件第2页浏览型号KSD288OTU的Datasheet PDF文件第3页浏览型号KSD288OTU的Datasheet PDF文件第4页 
KSD288  
Power Regulator  
Low Frequency High Power Amplifier  
Collector-Base Voltage : V  
=80V  
CBO  
Collector Dissipation : P =25W(T =25°C)  
C
C
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
80  
V
V
CBO  
CEO  
EBO  
55  
5
V
I
3
25  
A
C
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =500µA, I =0  
80  
55  
5
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =10mA,I =0  
V
C
B
I =500µA, I =0  
V
E
C
I
V
=50V,I =0  
50  
240  
1
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V,I =0.5A  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I =1A, I =0.1A  
V
CE  
C
B
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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