KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
•
Complement to KSA1220/KSA1220A
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
CBO
: KSC2690
: KSC2690A
120
160
V
V
V
Collector- Emitter Voltage
: KSC2690
: KSC2690A
CEO
EBO
120
160
V
V
V
Emitter-Base Voltage
Collector Current (DC)
5
1.2
V
A
I
I
I
C
*Collector Current (Pulse)
Base Current(DC)
2.5
A
CP
B
0.3
A
P
Collector Dissipation (T =25°C)
1.2
W
W
°C
°C
C
a
P
Collector Dissipation (T =25°C)
20
C
C
T
Junction Temperature
150
J
T
Storage Temperature
- 55 ~ 150
STG
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
Min.
Typ.
Max.
Units
µA
I
I
V
V
= 120V, I = 0
1
1
CBO
EBO
CB
E
= 3V, I = 0
µA
EB
C
h
h
V
V
= 5V, I = 5mA
35
60
105
140
FE1
FE2
CE
CE
C
= 5V, I = 0.3A
320
0.7
1.3
C
V
V
(sat)
(sat)
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
I
I
= 1A, I = 0.2A
0.4
1
V
V
CE
C
C
B
= 1A, I = 0.2A
BE
B
f
V
V
= 5V, I = 0.2A
155
19
MHz
pF
T
CE
CB
C
C
=10V, I =0, f = 1MHz
ob
E
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
Classificntion
FE
Classification
R
O
Y
h
60 ~ 120
100 ~ 200
160 ~ 320
FE2
©2000 Fairchild Semiconductor International
Rev. A, February 2000