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KSA1220AYS PDF预览

KSA1220AYS

更新时间: 2024-02-12 16:14:48
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管功率双极晶体管功率放大器局域网
页数 文件大小 规格书
5页 82K
描述
Audio Frequency Power Amplifier High Frequency Power Amplifier

KSA1220AYS 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.31
Is Samacsys:N最大集电极电流 (IC):1.2 A
集电极-发射极最大电压:120 V配置:SINGLE
最小直流电流增益 (hFE):160JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):175 MHzBase Number Matches:1

KSA1220AYS 数据手册

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KSA1220/1220A  
Audio Frequency Power Amplifier  
High Frequency Power Amplifier  
Complement to KSC2690/KSC2690A  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
: KSA1220  
: KSA1220A  
- 120  
- 160  
V
V
CBO  
: KSA1220  
: KSA1220A  
- 120  
- 160  
V
V
CEO  
EBO  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
- 5  
- 1.2  
- 2.5  
- 0.3  
1.2  
V
A
I
I
I
C
A
CP  
B
A
P
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
20  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
- 1  
Units  
µA  
I
I
V
V
= - 120V, I = 0  
CBO  
EBO  
CB  
EB  
E
= - 3V, I = 0  
- 1  
µA  
C
h
h
V
V
= - 5V, I = - 5mA  
35  
60  
150  
140  
FE1  
FE2  
CE  
CE  
C
= - 5V, I = - 0.3A  
320  
- 0.7  
- 1.3  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
I
= - 1A, I = - 0.2A  
- 0.4  
- 1  
V
V
CE  
C
C
B
= - 1A, I = - 0.2A  
BE  
B
f
V
= - 5V, I = - 0.2A  
175  
26  
MHz  
pF  
T
CE  
C
C
V
= - 10, I = 0  
E
ob  
CB  
f = 1MHz  
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
60 ~ 120  
100 ~ 200  
160 ~ 320  
FE2  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

KSA1220AYS 替代型号

型号 品牌 替代类型 描述 数据表
KSA1220AYSTSTU FAIRCHILD

类似代替

Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
KSA1220AYS ONSEMI

功能相似

PNP外延硅晶体管
KSA1220AY FAIRCHILD

功能相似

Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast

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KSA1220AYSTSTU FAIRCHILD

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Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
KSA1220YSTU FAIRCHILD

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Power Bipolar Transistor, 1.2A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plast
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Power Amplifier Applications
KSA1241 SAMSUNG

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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
KSA1241O FAIRCHILD

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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, I
KSA1241-O SAMSUNG

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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
KSA1241-O-I SAMSUNG

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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
KSA1241OTU FAIRCHILD

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暂无描述
KSA1241-Y-I SAMSUNG

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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3