Datasheet > KS33K5

KS33K5

更新时间： 2024-11-27 11:31:35

品牌	Logo	应用领域
SECOS		二极管
页数	文件大小	规格书
2页	135K
描述
40 W Transient Voltage Suppressor Diode

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中文翻译

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KS33K5 数据手册

KS33K5

Voltage: 3.3 V

40 W Transient Voltage Suppressor Diode

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-363

DESCRIPTION

Designed to protect voltage sensitive components from ESD

Excellent clamping capability, low leakage and fast response

Cellular phones, MP3 players, digital cameras ... etc.

Suitable for electronics where board space is

a major design consideration

FEATURES

D G

Response time is typically < 1 ns

Low leakage

Stand-off voltage: 3.3 V

ESD rating of class 3 (> 15 kV) per human body model

IEC61000-4-2 level 4 ESD protection

Millimeter

REF.

Min.

Max.

2.20

2.45

1.35

1.10

Min.

Max.

2.00

2.15

1.15

0.90

0.100 REF.

0.525 REF.

0.08

0.15

8°

1.20

0.15

1.40

0.35

0.650 TYP.

MARKING CODE

33K5

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise specified)

Symbol

Parameter

Value

Units

air discharge

contact discharge

V_ESD

ESD Voltage IEC61000-4-2 (ESD)

P_D

T_L

R_θJA

Total Power Dissipation on FR-5 board (Note 2)

Lead Solder Temperature - Max. (10 sec duration)

Thermal Resistance Junction-to-ambient

150

260

833

°C

°C / W

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 ~ +150

Stresses exceeding "Maximum Ratings" may damage the device. "Maximum Ratings" are stress ratings only. Functional operation above the

recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device

reliability.

1. FR-5 = 1.0 x 0.75 x 0.62 in.

2. Only 1 diode under power. For all 5 diodes under power, PD will be 20%. Mounted on FR-4 board with min pad.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Type Number

Reverse Stand-Off Voltage

Reverse Leakage Current

Peak Pulse Current

Clamping Voltage

Reverse Breakdown

Voltage

Symbol

V_RWM

I_R

Min.

Typ.

Max.

3.3

250

3.5

9.0

12.0

Unit

Test Conditions

V_RWM= 3.3 V

I_PP

V_C

I_PP= 1 A

I_PP= 3.5 A

V_BR

5.35

5.7

5.85

I_T= 1 mA, T_AMB= 25 °C

Test Current

Junction Capacitance

I_T

1.0

F = 1MHz, T_AMB= 25°C

(@8x20 μS,@ T_A<&= 25°C;

Non-repetitive current per

Peak Power Dissipation

P_PK

Figure 1. Derate per Figure 2)

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

24-Aug-2008 Rev. B

Page 1 of 2

中文翻译

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