5秒后页面跳转
KRA551E PDF预览

KRA551E

更新时间: 2024-11-22 22:47:35
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
6页 115K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRA551E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):30JESD-30 代码:R-PDSO-F5
元件数量:2端子数量:5
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

KRA551E 数据手册

 浏览型号KRA551E的Datasheet PDF文件第2页浏览型号KRA551E的Datasheet PDF文件第3页浏览型号KRA551E的Datasheet PDF文件第4页浏览型号KRA551E的Datasheet PDF文件第5页浏览型号KRA551E的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KRA551E~KRA556E  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
5
4
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
_
1.0+0.05  
_
1.6+0.05  
_
+
B1  
C
1.2 0.05  
0.50  
_
D
H
J
0.2+0.05  
_
+
0.5 0.05  
_
+
0.12 0.05  
P
P
EQUIVALENT CIRCUIT  
OUT  
BIAS RESISTOR VALUES  
P
5
TYPE NO.  
KRA551E  
KRA552E  
KRA553E  
KRA554E  
KRA555E  
KRA556E  
R1(k) R2(k)  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
IN  
1. Q IN (BASE)  
2. Q , Q COMMON (EMITTER)  
3. Q IN (BASE)  
4. Q OUT (COLLECTOR)  
1
1
2
2
R2  
22  
2
5. Q OUT (COLLECTOR)  
1
47  
2.2  
4.7  
COMMON(+)  
TESV  
EQUIVALENT CIRCUIT (TOP VIEW)  
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
-50  
UNIT  
V
Output Voltage  
KRA551E556E  
KRA551E  
-20, 10  
-30, 10  
-40, 10  
-40, 10  
-12, 5  
-20, 5  
-100  
KRA552E  
KRA553E  
VI  
Input Voltage  
V
KRA554E  
KRA555E  
KRA556E  
IO  
PD *  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
Junction Temperature  
Storage Temperature Range  
* Total Rating.  
200  
KRA551E556E  
150  
Tstg  
-55150  
Marking  
Type Name  
5
4
3
MARK SPEC  
TYPE  
KRA551E KRA552E KRA553E KRA554E KRA555E KRA556E  
MARK  
PA PB PC PD PE PF  
1
2
2002. 1. 24  
Revision No : 1  
1/6  

与KRA551E相关器件

型号 品牌 获取价格 描述 数据表
KRA551U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA552E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA552U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA553E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA553U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA554E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA554U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA555E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA555U KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRA556E KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)