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KP1000-18 PDF预览

KP1000-18

更新时间: 2024-03-03 10:10:49
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KP1000-18 数据手册

 浏览型号KP1000-18的Datasheet PDF文件第1页浏览型号KP1000-18的Datasheet PDF文件第3页 
Jiangsu Yangjie Runau Semiconductor Co., Ltd  
ELECTRICAL CHARACTERISTICS AND RATINGS  
KP1000-POWER THYRISTOR  
Gating  
Parameter  
Symbol  
PGM  
Min.  
Max.  
20  
Typ.  
Units Conditions  
Peak gate power dissipation  
Average gate power dissipation  
Gate-trigger current  
W
W
mA  
V
PG(AV)  
IGT  
4
150  
2.5  
5
VD =12 V;RL = 3 ohms;Tj = +25 oC  
VD = 12 V;RL = 3 ohms;Tj = +25 oC  
Gate- trigger voltage  
Peak negative voltage  
VGT  
0.70  
VGRM  
V
Dynamic  
Parameter  
Symbol  
Min.  
Max.  
Typ.  
Units Conditions  
ITM =100 A; VD = 67% VDRM  
Delay time  
td  
3.0  
2.5  
Gate pulse: VG = 30 V; RG = 10 ohms;  
tr = 0.1μs; tp = 20μs  
s  
ITM =1000 A; di/dt =- 10 A/s;  
VR =50 V; dV/dt=30V/s ;  
VD= 67%VDRM;Tj=125oC  
ITM=1000Adi/dt=-10A/s;  
VR=50 V; Tj=125℃  
Turn-off time (with VR = -5 V)  
Reverse recovery charge  
tq  
200  
s  
Qrr  
2000  
C  
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS  
Parameter  
Symbol  
Tj  
Min.  
-40  
Max.  
+125  
Typ.  
Units  
oC  
Conditions  
Operating temperature  
Storage temperature  
Tstg  
-40  
+140  
0.03  
0.006  
22  
oC  
Thermal resistance - junction to  
case  
RΘ (j-c)  
RΘ (c-s)  
P
oC/W Double sided cooled  
oC/W Double sided cooled  
kN  
Thermal resistance - case to  
heatsink  
Mounting force  
Weight  
18  
20  
W
0.33  
kg  
* Mounting surfaces smooth, flat and greased  
http://www.chinarunau.com  
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