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KP1000A1100-1800V Y45KPE PDF预览

KP1000A1100-1800V Y45KPE

更新时间: 2022-09-06 10:38:19
品牌 Logo 应用领域
柳晶 - LIUJING 可控硅
页数 文件大小 规格书
3页 475K
描述
可控硅、晶闸管

KP1000A1100-1800V Y45KPE 数据手册

 浏览型号KP1000A1100-1800V Y45KPE的Datasheet PDF文件第2页浏览型号KP1000A1100-1800V Y45KPE的Datasheet PDF文件第3页 
KP1000A1100~1800V  
Y45KPE  
国标型 普通晶闸管 平板式  
-
(
)
Chinese Type Phase Control Thyristors (Capsule Version)  
Liujing rectifier co., Ltd.  
FEATURES  
1). Center amplifying gate  
2). Metal case with ceramic insulator  
3). Low on-state and switching losses  
TYPICAL APPLICATIONS  
IT(AV)  
1271A  
1). AC controllers  
VDRM/VRRM 1100~1800V  
2). DC and AC motor control  
3). Controlled rectiers  
ITSM  
I2t  
13 KA  
845 103A2S  
THE MAIN PARAMETERS  
VALUE  
SYMBOL  
IT(AV)  
CHARACTERISTIC  
TEST CONDITIONS  
Tj(  
)
UNIT  
A
Min Type Max  
O
Ths=55  
1271  
1000  
180 half sine wave 50Hz  
Double side cooled,  
Mean on-state current  
125  
Ths=75  
VDRM  
VRRM  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
VDRM&VRRM,tp=10ms  
DSM&VRSM= VDRM&VRRM+100V  
1800  
125 1100  
125  
V
V
IDRM  
IRRM  
Repetitive peak off-state current  
Repetitive peak reverse current  
VD= VDRM  
VR= VRRM  
60  
13  
mA  
KA  
ITSM  
I2t  
Surge on-state current  
I2T for fusing coordination  
Threshold voltage  
10ms half sine wave  
VR=0.6VRRM  
125  
845 A2s*103  
VTO  
rT  
0.93  
V
125  
Ω
m
On-state slop resistance  
Peak on-state voltage  
0.29  
ITM=3000A, F=21KN  
VDM=0.67VDRM  
VTM  
dv/dt  
125  
125  
1.80  
V
μ
Critical rate of rise of off-state voltage  
1000 V/  
s
s
VDM= 67%VDRM to1500A,  
μ
di/dt  
Critical rate of rise of on-state current  
125  
500  
A/  
μ
Gate pulse tr 0.5 s IGM=1.5A  
Irm  
trr  
Reverse recovery current  
Reverse recovery time  
Recovery charge  
184  
17.2  
1581  
300  
3.0  
A
μ
ITM=1000A,tp=1000 s,  
μ
di/dt=-20A/ s,  
μ
125  
s
VR=50V  
μ
Qrr  
IGT  
VGT  
IH  
C
Gate trigger current  
Gate trigger voltage  
Holding current  
40  
mA  
V
VA=12V, IA=1A  
VDM=0.67VDRM  
25  
0.8  
20  
250  
mA  
V
VGD  
Non-trigger gate voltage  
125  
0.3  
°
At 180 sine, double side cooled  
Clamping force 21KN  
Thermal resistance  
Junction to heatsink  
/W  
Rth(j-h)  
0.030  
Fm  
Mounting force  
Stored temperature  
Weight  
18  
25  
KN  
T
stg  
-40  
140  
Wt  
400  
g
Size  
Package box size  
mm  
×
×
95 95 50  
www.china-liujing.com  
1 / 3  

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