DATA SHEET
SILICON TRANSISTOR
KN4xxx
RESISTOR BUILT-IN TYPE PNP TRANSISTOR
FEATURES
PACKAGE DRAWING (Unit: mm)
• Compact package
• Resistors built-in type
• Complementary to KA4xxx
+0.1
–0
0.3
+0.1
–0.05
0.15
ORDERING INFORMATION
PART NUMBER
3
0 to 0.1
PACKAGE
2
1
KN4xxx
SC-75 (USM)
+0.1
–0
0.2
0.6
0.05
0.5
0.5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
0.75
±
1.0
1.6 ± 0.1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
VCBO
VCEO
VEBO
IC
−60
−50
V
V
EQUIVALENT CIRCUIT
PIN CONNECTION
1: Emitter
Note1
V
−0.1
A
3
Collector Current (pulse) Note2 IC(pulse)
−0.2
A
2: Base
2
Total Power Dissipation Note3
Junction Temperature
Storage Temperature
PT
Tj
0.2
W
°C
°C
3: Collector
R1
150
R2
Tstg
–55 to +150
1
Note 1.
PART NUMBER
VEBO
(V)
MARK
R1
R2
PART NUMBER
VEBO
(V)
MARK
R1
R2
(kΩ)
10.0
22.0
47.0
4.7
(kΩ)
(kΩ)
(kΩ)
KN4A4M
KN4F4M
KN4L4M
KN4L3M
KN4L3N
KN4L3Z
KN4A3Q
KN4A4P
KN4F4N
−10
−10
−10
−10
−5
A7
B7
C7
D7
E7
F7
G7
H7
X7
10.0
22.0
47.0
4.7
KN4L4L
KN4A4Z
KN4F4Z
KN4L4Z
KN4F3M
KN4F3P
KN4F3R
KN4A4L
KN4L4K
−15
−5
K7
Y7
Z7
N7
P7
Q7
R7
S7
T7
47.0
10.0
22.0
47.0
2.2
22.0
−5
−5
4.7
10.0
−10
−5
2.2
10.0
47.0
4.7
−5
4.7
2.2
−5
1.0
10.0
47.0
47.0
−5
2.2
−5
10.0
22.0
−15
−25
10.0
47.0
−5
10.0
Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%
Note 3. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
<R>
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16489EJ5V0DS00 (5th edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.