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KMZ10B

更新时间: 2024-02-02 13:58:09
品牌 Logo 应用领域
恩智浦 - NXP 传感器换能器磁场传感器
页数 文件大小 规格书
8页 71K
描述
Magnetic field sensor

KMZ10B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SIP4,.05,50Reach Compliance Code:compliant
风险等级:5.77主体宽度:1.7 mm
主体高度:6.7 mm主体长度或直径:4.6 mm
线性度 (%):6.5 %安装特点:THROUGH HOLE MOUNT
轴数:2端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SIP4,.05,50
封装形状/形式:RECTANGULAR传感器/换能器类型:MAGNETIC FIELD SENSOR,MAGNETORESISTIVE
最大供电电压:10 V表面贴装:NO
端接类型:SOLDERBase Number Matches:1

KMZ10B 数据手册

 浏览型号KMZ10B的Datasheet PDF文件第2页浏览型号KMZ10B的Datasheet PDF文件第3页浏览型号KMZ10B的Datasheet PDF文件第4页浏览型号KMZ10B的Datasheet PDF文件第6页浏览型号KMZ10B的Datasheet PDF文件第7页浏览型号KMZ10B的Datasheet PDF文件第8页 
Philips Semiconductors  
Product specification  
Magnetic field sensor  
KMZ10B  
MGD802  
MGD803  
2
20  
H
d
(kA/m)  
S
(H )  
x
S
(3 kA/m)  
H
x
H
y
H
d
1
10  
safe operating  
area  
(1)  
H
> 1 kA/m  
(2)  
y
H
1 kA/m  
y
0
0
0
1
2
3
4
H
5
0
1
2
3
4
H
5
(kA/m)  
(kA/m)  
x
x
In applications with Hx < 3 kA/m, the sensor has to be reset,  
after leaving the SOAR, by an auxiliary field of Hx = 3 kA/m.  
(1) Region of permissible operation.  
In applications with Hx 3 kA/m, the sensor has to be  
reset by an auxiliary field of Hx = 3 kA/m before using.  
(2) Permissible extension if Hy < 1 kA/m.  
Fig.4 Safe Operating Area (permissible disturbing  
field Hd as a component of auxiliary field Hx).  
Fig.5 Relative sensitivity (ratio of sensitivity at  
certain Hx and sensitivity at Hx = 3 kA/m).  
MSA926  
max  
typ  
min  
8
V
o
(mV/V)  
4
0
4
8
2
1
0
1
2
H
(kA/m)  
y
VB = constant; Hx = 3 kA/m; Tamb = 25 °C; Voffset = 0.  
Fig.6 Sensor output characteristics.  
1998 Mar 31  
5

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