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KMZ10B PDF预览

KMZ10B

更新时间: 2024-01-28 15:17:11
品牌 Logo 应用领域
恩智浦 - NXP 传感器换能器磁场传感器
页数 文件大小 规格书
8页 71K
描述
Magnetic field sensor

KMZ10B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SIP4,.05,50Reach Compliance Code:compliant
风险等级:5.77主体宽度:1.7 mm
主体高度:6.7 mm主体长度或直径:4.6 mm
线性度 (%):6.5 %安装特点:THROUGH HOLE MOUNT
轴数:2端子数量:4
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:SIP4,.05,50
封装形状/形式:RECTANGULAR传感器/换能器类型:MAGNETIC FIELD SENSOR,MAGNETORESISTIVE
最大供电电压:10 V表面贴装:NO
端接类型:SOLDERBase Number Matches:1

KMZ10B 数据手册

 浏览型号KMZ10B的Datasheet PDF文件第1页浏览型号KMZ10B的Datasheet PDF文件第2页浏览型号KMZ10B的Datasheet PDF文件第3页浏览型号KMZ10B的Datasheet PDF文件第5页浏览型号KMZ10B的Datasheet PDF文件第6页浏览型号KMZ10B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Magnetic field sensor  
KMZ10B  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Rth j-a  
thermal resistance from junction to ambient  
180  
K/W  
CHARACTERISTICS  
Tamb = 25 °C; Hx = 3 kA/m; note 1.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
VCC  
Hy  
S
bridge supply voltage  
magnetic field strength  
sensitivity  
5
V
2  
+2  
kA/m  
open circuit, notes 2 and 3 3.2  
4.8  
mV V  
----------------  
kA m  
TCVO  
temperature coefficient of  
output voltage  
VCC = 5 V;  
Tj = 25 to +125 °C  
0.4  
%/K  
IB = 3 mA;  
0.1  
%/K  
Tj = 25 to +125 °C  
Rbridge  
bridge resistance  
1.6  
2.6  
kΩ  
TCRbridge temperature coefficient of  
bridge resistance  
Tbridge = 25 to +125 °C  
Tj = 25 to +125 °C  
0.3  
%/K  
Voffset  
offset voltage  
1.5  
3  
+1.5  
mV/V  
TCVoffset offset voltage drift  
+3  
µ V V  
---------------  
K
FL  
linearity deviation of output  
voltage  
Hy = 0 to ±1 kA/m  
Hy = 0 to ±1.6 kA/m  
Hy = 0 to ±2 kA/m  
0
±0.5  
±1.7  
±2  
% FS  
% FS  
% FS  
% FS  
MHz  
FH  
f
hysteresis of output voltage  
operating frequency  
0.5  
1
Notes  
1. In applications with Hx < 3 kA/m the sensor has to be reset before first operation by application of an auxiliary field  
Hx = 3 kA/m.  
2. No disturbing field (Hd) allowed; for stable operation under disturbing conditions see Fig.4 (SOAR) and see Fig.5 for  
decrease of sensitivity.  
(V O at Hy = 1.6 kA m) (VO at Hy = 0)  
3. S =  
.
---------------------------------------------------------------------------------------------------------------  
1.6 × VCC  
1998 Mar 31  
4

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