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KM6161002B-10 PDF预览

KM6161002B-10

更新时间: 2024-11-26 23:13:11
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 200K
描述
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.

KM6161002B-10 数据手册

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CMOS SRAM  
KM6161002B, KM6161002BI  
Document Title  
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Range.  
Revision History  
RevNo.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Draft Data  
Initial release with Design Target.  
Design Target  
Preliminary  
Apr. 1st, 1997  
Jun. 1st, 1997  
Release to Preliminary Data Sheet.  
1. Replace Design Target to Preliminary.  
Rev. 2.0  
Release to Final Data Sheet.  
2.1. Delete Preliminary  
Feb. 25th, 1998  
Final  
2.2. Delete L-version.  
2.3. Delete Data Retention Characteristics and Waveform.  
2.4. Add Capacitive load of the test environment in A.C test load  
2.5. Change D.C characteristics  
Previous spec.  
(8/10/12ns part)  
200/190/180mA  
30mA  
Changed spec.  
(8/10/12ns part)  
200/195/190mA  
50mA  
Items  
Icc  
Isb  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of th is  
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 2.0  
February 1998  
- 1 -  

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