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KM29W16000BIT PDF预览

KM29W16000BIT

更新时间: 2024-11-28 20:00:07
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管内存集成电路
页数 文件大小 规格书
25页 444K
描述
Flash, 2MX8, 45ns, PDSO40, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40

KM29W16000BIT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44/40
针数:44Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.89最长访问时间:45 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:18.41 mm内存密度:16777216 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:512
端子数量:40字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP40/44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:256 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:4K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:SLC NAND TYPE
宽度:10.16 mmBase Number Matches:1

KM29W16000BIT 数据手册

 浏览型号KM29W16000BIT的Datasheet PDF文件第2页浏览型号KM29W16000BIT的Datasheet PDF文件第3页浏览型号KM29W16000BIT的Datasheet PDF文件第4页浏览型号KM29W16000BIT的Datasheet PDF文件第5页浏览型号KM29W16000BIT的Datasheet PDF文件第6页浏览型号KM29W16000BIT的Datasheet PDF文件第7页 
Preliminary  
KM29W16000BT, KM29W16000BIT  
FLASH MEMORY  
Document Title  
2M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
April 10th 1999  
Preliminary  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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