是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFJ |
包装说明: | QCCJ, LDCC32,.5X.6 | 针数: | 32 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.91 |
最长访问时间: | 90 ns | 命令用户界面: | NO |
数据轮询: | YES | JESD-30 代码: | R-PQCC-J32 |
JESD-609代码: | e0 | 长度: | 13.97 mm |
内存密度: | 65536 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 8192 words |
字数代码: | 8000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 8KX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装等效代码: | LDCC32,.5X.6 | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 页面大小: | 64 words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 编程电压: | 5 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 3.55 mm | 最大待机电流: | 0.0001 A |
子类别: | EEPROMs | 最大压摆率: | 0.04 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 切换位: | YES |
宽度: | 11.43 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM28I01 | SAMSUNG |
获取价格 |
EEPROM, 128X8, Serial, CMOS | |
KM28I01G | SAMSUNG |
获取价格 |
EEPROM, 128KX8, Parallel, CMOS, PDSO8, 0.225 INCH, SOP-8 | |
KM28I04 | SAMSUNG |
获取价格 |
EEPROM, 512X8, Serial, CMOS, PDIP8, PLASTIC, DIP-8 | |
KM28N800G-B12 | SAMSUNG |
获取价格 |
Flash, 1MX8, 120ns, PDSO44, 0.600 INCH, SOP-44 | |
KM28N800G-B7 | SAMSUNG |
获取价格 |
Flash, 1MX8, 70ns, PDSO44, 0.600 INCH, SOP-44 | |
KM28N800G-B9 | SAMSUNG |
获取价格 |
Flash, 1MX8, 90ns, PDSO44, 0.600 INCH, SOP-44 | |
KM28N800G-T12 | SAMSUNG |
获取价格 |
Flash, 1MX8, 120ns, PDSO44, 0.600 INCH, SOP-44 | |
KM28N800G-T7 | SAMSUNG |
获取价格 |
Flash, 1MX8, 70ns, PDSO44, 0.600 INCH, SOP-44 | |
KM28N800T-B12 | SAMSUNG |
获取价格 |
Flash, 1MX8, 120ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | |
KM28N800T-B7 | SAMSUNG |
获取价格 |
Flash, 1MX8, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 |