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KM23S32005BTY PDF预览

KM23S32005BTY

更新时间: 2023-01-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管
页数 文件大小 规格书
6页 98K
描述
MASK ROM, 4MX8, 150ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48

KM23S32005BTY 数据手册

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KM23V32005D(E)TY/KM23S32005D(E)TY  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
The KM23V32005D(E)TY and KM23S32005D(E)TY are fully  
static mask programmable ROM fabricated using silicon gate  
CMOS process technology, and is organized either as  
4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode)  
depending on BHE voltage level.(See mode selection table)  
This device includes page read mode function, page read mode  
allows 8 words (or 16 bytes) of data to read fast in the same  
page, CE and A3 ~ A20 should not be changed.  
· Switchable organization  
4,194,304x8(byte mode)  
2,097,152x16(word mode)  
· Fast access time  
Random Access Time/Page Access Time  
3.3V/3.0V Operation : 100/30ns(Max.)  
2.5V Operation : 150/50ns(Max.)  
· 8 words/ 16 bytes page access  
· Supply voltage  
KM23V32005D(E)TY : single +3.0V/ single +3.3V  
KM23S32005D(E)TY : single +2.5V  
· Current consumption  
This device operates with low power supply, and all inputs and  
outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
Operating : 60mA(Max.)  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
The KM23V32005D(E)TY and KM23S32005D(E)TY are pack-  
aged in a 48-TSOP1.  
-. KM23V(S)32005D(E)TY : 48-TSOP1-1218  
FUNCTIONAL BLOCK DIAGRAM  
Pin Name  
A0 - A2  
Pin Function  
Page Address Inputs  
A20  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
(2,097,152x16/  
4,194,304x8)  
A3 - A20  
Q0 - Q14  
Address Inputs  
Data Outputs  
DECODER  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
Y
SENSE AMP.  
BUFFERS  
AND  
BHE  
CE  
Word/Byte selection  
Chip Enable  
Output Enable  
Power  
DATA OUT  
BUFFERS  
DECODER  
A3  
A0~A2  
A-1  
OE  
.
.
.
VCC  
VSS  
Ground  
CE  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
OE  
BHE  

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