KM23V32005D(E)TY/KM23S32005D(E)TY
CMOS MASK ROM
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM
FEATURES
GENERAL DESCRIPTION
The KM23V32005D(E)TY and KM23S32005D(E)TY are fully
static mask programmable ROM fabricated using silicon gate
CMOS process technology, and is organized either as
4,194,304 x8 bit(byte mode) or as 2,097,152x16 bit(word mode)
depending on BHE voltage level.(See mode selection table)
This device includes page read mode function, page read mode
allows 8 words (or 16 bytes) of data to read fast in the same
page, CE and A3 ~ A20 should not be changed.
· Switchable organization
4,194,304x8(byte mode)
2,097,152x16(word mode)
· Fast access time
Random Access Time/Page Access Time
3.3V/3.0V Operation : 100/30ns(Max.)
2.5V Operation : 150/50ns(Max.)
· 8 words/ 16 bytes page access
· Supply voltage
KM23V32005D(E)TY : single +3.0V/ single +3.3V
KM23S32005D(E)TY : single +2.5V
· Current consumption
This device operates with low power supply, and all inputs and
outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
Operating : 60mA(Max.)
Standby : 30mA(Max.)
· Fully static operation
· All inputs and outputs TTL compatible
· Three state outputs
· Package
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The KM23V32005D(E)TY and KM23S32005D(E)TY are pack-
aged in a 48-TSOP1.
-. KM23V(S)32005D(E)TY : 48-TSOP1-1218
FUNCTIONAL BLOCK DIAGRAM
Pin Name
A0 - A2
Pin Function
Page Address Inputs
A20
X
MEMORY CELL
MATRIX
BUFFERS
AND
.
.
.
.
.
.
.
.
(2,097,152x16/
4,194,304x8)
A3 - A20
Q0 - Q14
Address Inputs
Data Outputs
DECODER
Output 15(Word mode)/
LSB Address(Byte mode)
Q15 /A-1
Y
SENSE AMP.
BUFFERS
AND
BHE
CE
Word/Byte selection
Chip Enable
Output Enable
Power
DATA OUT
BUFFERS
DECODER
A3
A0~A2
A-1
OE
.
.
.
VCC
VSS
Ground
CE
Q0/Q8
Q7/Q15
CONTROL
LOGIC
OE
BHE