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KLP-32B PDF预览

KLP-32B

更新时间: 2024-11-21 05:40:55
品牌 Logo 应用领域
可天士 - KODENSHI 二极管
页数 文件大小 规格书
2页 198K
描述
Light Emitting Diode(InGaN)

KLP-32B 数据手册

 浏览型号KLP-32B的Datasheet PDF文件第2页 
Light Emitting Diode(InGaN)  
KLP-32B-X-X  
DIMENSIONS  
KLP-32B-x-x is a high bright InGaN blue LED,  
and has the optimized optical characteristics.  
1
2
Features  
• Transparent epoxy Encapsulent  
• High Optical Output  
Pin Connection  
1.Cathode  
2.Anode  
Applications  
• Display  
• Indicator  
• Signage  
[ Ta=25°C ]  
Unit  
Maximum Ratings  
Parameter  
Symbol  
Ratings  
VR  
Reverse Voltage (w/o Zener Option)  
5
50  
V
IR  
IF  
Reverse current ( w Zener Option)  
Forward current  
Pulse forward current *1  
mA  
mA  
A
30  
IFP  
0.1  
PD  
Power dissipation  
90  
mW  
°C  
Topr.  
Tstg.  
Tsol.  
Operating temperature  
Storage temperature  
Soldering Temperature *2  
*1. IFP Measured under duty £ 1/10 @ 1KHz  
*2. Soldering time £ 5 Sec  
-30 ~ +85  
-40 ~ +105  
260  
°C  
°C  
[ Ta=25°C ]  
Unit  
V
Electro-Optical Characteristics  
Parameter  
Symbol  
Conditions  
IF = 20 mA  
Min  
-
Typ  
3.2  
Max  
VF  
Forward voltage  
-
-
-
-
Po  
Iv  
λP  
9.00  
250  
-
12.00  
350  
mW  
mcd  
IF = 20 mA  
Optical Output Power  
IF = 20 mA  
IF = 20 mA  
IF = 20 mA  
IF = 20 mA  
Peak emission wavelength  
Doninant Wave Length  
Spectral half bandwidth  
Half angle  
469  
nm  
λd  
∆λ  
∆Θ  
465  
-
478  
nm  
nm  
-
-
25  
-
-
110  
deg.  
1/2  

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