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KK3000A1900-2500V Y89KKG PDF预览

KK3000A1900-2500V Y89KKG

更新时间: 2024-11-21 07:08:07
品牌 Logo 应用领域
柳晶 - LIUJING 可控硅
页数 文件大小 规格书
3页 447K
描述
可控硅、晶闸管

KK3000A1900-2500V Y89KKG 数据手册

 浏览型号KK3000A1900-2500V Y89KKG的Datasheet PDF文件第2页浏览型号KK3000A1900-2500V Y89KKG的Datasheet PDF文件第3页 
KK3000A1900~2500V  
Y89KKG  
国标型 快速晶闸管 平板式  
-
(
)
Chinese Type Fast Thyristors (Capsule Version)  
Liujing rectifier co., Ltd.  
FEATURES  
1). Interdigitated amplifying gates  
2). Fast turn-on and high di/dt  
3). Low switching losses  
IT(AV)  
3208A  
VDRM/VRRM 1900~2500V  
tq  
ITSM  
I2t  
μ
s
60~110  
44KA  
9680 103A2S  
TYPICAL APPLICATIONS  
1). Inductive heating  
2). Electronic welders  
3). Self-commutated inverters  
THE MAIN PARAMETERS  
VALUE  
Min Type Max  
SYMBOL  
IT(AV)  
CHARACTERISTIC  
Mean forward current  
TEST CONDITIONS  
Tj(  
)
UNIT  
A
°
180 half sine wave 50Hz  
Double side cooled, Ths=55  
125  
3208  
VDRM  
VRRM  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
VDRM&VRRM,tp=10ms  
DSM&VRSM= VDRM&VRRM+100V  
125 1900  
125  
2500  
V
V
IDRM  
IRRM  
Repetitive peak off-state current  
Repetitive peak reverse current  
VD= VDRM  
VR= VRRM  
250  
44  
mA  
KA  
ITSM  
I2t  
Surge on-state current  
I2T for fusing coordination  
Threshold voltage  
10ms half sine wave  
VR=0.6VRRM  
125  
9680 A2s*103  
VTO  
rT  
1.32  
0.14  
2.02  
500  
V
Ω
m
125  
On-state slop resistance  
Peak on-state voltage  
ITM=5000A, F=78KN  
VTM  
dv/dt  
125  
125  
V
VDM=0.67VDRM  
μ
Critical rate of rise of off-state voltage  
V/  
s
s
VDM= 67%VDRM to4000A,  
μ
di/dt  
Critical rate of rise of on-state current  
125  
1000  
A/  
μ
Gate pulse tr 0.5 s IGM=1.5A  
Irm  
trr  
Reverse recovery current  
Reverse recovery time  
Recovery charge  
195  
A
μ
ITM=2000A,tp=1000 s,  
μ
di/dt=-20A/ s,  
μ
125  
10.4  
s
VR=50V  
μ
Qrr  
1014 1100  
C
μ
ITM=2000A,tp=1000 s, VR =50V  
μ
s
tq  
Circuit commutated turn-off time  
125  
60  
110  
μ
dv/dt=30V/ s ,di/dt=-20A/  
μ
s
IGT  
VGT  
IH  
Gate trigger current  
Gate trigger voltage  
Holding current  
40  
0.9  
20  
450  
4.5  
mA  
V
25  
VA=12V, IA=1A  
VDM=67%VDRM  
1000  
mA  
V
VGD  
Non-trigger gate voltage  
125  
0.3  
°
At 180 sine, double side cooled  
Clamping force 78KN  
Thermal resistance  
Junction to heatsink  
/W  
Rth(j-h)  
0.009  
Fm  
Mounting force  
Stored temperature  
Weight  
70  
85  
140  
KN  
T
stg  
-40  
Wt  
1900  
g
Size  
Package box size  
×
×
mm  
160 145 65  
www.china-liujing.com  
1 / 3  

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