(
)
PK PD,PE,KK 25HB
On-State Voltage max
Gate Characteristics
2�
5�
Peak Forward Gate Voltage(10V)�
1�
�
10
2�
Tj=125℃�
5�
2�
10
5�
2�
0�
10
2�
5�
1�
10
-30℃�
125℃� 25℃�
5�
2�
Maximum Gate Voltage that will not trigger any uni(t 0.25V)�
101�
-
1�
2�
3�
0.5�
1.0�
1.5�
2.0�
2.5�
3.0�
10
2�
5� 10
2�
5� 10
2�
5�
On-State Voltage(V)�
Gate Curren(t mA)�
Average On-State Current Vs Maximum Allowable�
Case Temperature(Single phase half wave)
Average On-State Current Vs Power Dissipation�
(Single phase half wave)
140�
60�
Per one element
Per one element
2
120�
100�
80�
60�
40�
20�
D.C.
50�
40�
360。�
: Conduction Angle
�
θ=180゜�
θ=120゜�
θ=90゜�
θ=60゜�
θ=30゜�
30�
20�
10�
2
θ=30゜�
θ=180゜�
θ=90゜�
D.C.
360。�
θ=60゜� θ=120゜�
: Conduction Angle
0�
10�
20�
30�
40�
50�
10�
20�
30�
40�
50�
0�
Average On-State Curren(t A)�
Average On-State Curren(t A)�
Surge On-State Current Rating�
Transient Thermal Impedance
1�
100� 2� 5� 10
(Non-Repetitive)�
0.9�
600�
Per one element
Junction to case
Tj=25℃ start
500�
0.6�
0.3�
0�
400�
300�
200�
Per one element
60Hz
50Hz
100�
0�
�
�
�
10-3� 2� 5�10-2� 2� 5�10-1� 2� 5�10
0�
1
2�
5�
10
20�
50� 100
Time(cycles)�
Time t(sec)�
B6;Six pulse bridge connection�
W3;Three phase�
Output Current
W1;Bidirectional connection
B2;Two Pluse bridge connection
bidiretional connection
250�
Conduction Angle 180゜�
250�
200�
150�
100�
50�
W3
Id(Ar.m.s.)�
Rth:0.1℃/W
Rth:1.0℃/W
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
B6
200�
100�
Id(Aav.)�
Rth:1.0℃/W
Rth:0.8℃/W
Rth:0.6℃/W
Rth:0.4℃/W
Rth:0.1℃/W
Rth:0.8℃/W
B2
150�
100�
50�
Id(Aav.)�
Id(Ar.m.s.)�
100�
110�
W1
90�
Rth:0.6℃/W
110�
100�
110�
Rth:0.4℃/W
120�
125�
120�
125�
120�
125�
�
0�
25�
50�
75�
0� 25�50� 75�100�125�
0� 25�50�75�100�125�
0� 25�50�75�100�125�
�
Output Curren(t A)�
Ambient Temp�erature(℃)�
Ambient Temperature(℃)�Ambient Temperature(℃)�