Datasheet > KID65505P/F

KID65505P/F

更新时间： 2024-01-25 12:02:57

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	935K
描述
SEMICONDUCTOR

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中文翻译

获取价格

数据手册

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KID65505P/F 数据手册

KID65501P/F~

SEMICONDUCTOR

KID65507P/F

TECHNICAL DATA

BIPOLAR LINEAR INTEGRATED CIRCUIT

SINGLE DRIVER

KID65501P/F COMMON EMITTER.

KID65502P/F COMMON EMITTER.

KID65503P/F COMMON EMITTER.

KID65504P/F COMMON EMITTER.

KID65505P/F COMMON COLLECTOR.

KID65506P/F COMMON COLLECTOR.

KID65507P/F ISOLATED.

FEATURES

· Output Current : 200mA Max.

· High Voltage Outputs : 35V

· Input Compatible with Various Types of Logic

KID65501P/F

KID65505P/F Using external resistor : General Purpose

KID65507P/F

KID65502P/F R_IN=7V Zener Diode+10.5kΩ : 14∼ 25V P-MOS

KID65503P/F

KID65506P/F R_IN=2.7kΩ : TTL, 5V C-MOS

KID65504P/F R_IN=10.5kΩ : 6∼ 15V P-MOS, C-MOS

DESCRIPTION :

The KID65501P/F Series are comprised of seven or five NPN Transistor

Arrays. For proper operation, the substrate (SUB) must be connected to the

most negative voltage.

MAXIMUM RATINGS (Ta=25℃, unless otherwise noted)

CHARACTERISTIC

Collector-Emitter Voltage

Collector-Base Voltage

Collector Current

SYMBOL

V_CEO

V_CBO

I_C

RATING

UNIT

200

V_IN*

-0.5∼ +45

-0.5∼ +30

Input Voltage

V_IN**

I_IN***

V_SUB

I_GND

Input Current

Isolation Voltage

GND Terminal Current

500

KID65501P∼

KID65507P

1.0

Power

Dissipation

P_D

KID65501F∼

KID65507F

0.54

T_opr

T_stg

Operating Temperature

Storage Temperature

-40∼ 85

℃

-55∼ 150

KID65506P/F

** KID65502P/F, KID65503P/F, KID65504P/F

*** KID65501P/F, KID65505P/F, KID65507P/F

2015. 6. 23

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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