Datasheet > KF3N60D/I

KF3N60D/I

更新时间： 2024-10-01 01:12:07

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	1013K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF3N60D/I 数据手册

KF3N60D/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF3N60D

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

· V_DSS= 600V, I_D= 2.3A

0.96 MAX

0.90 MAX

· Drain-Source ON Resistance : R_DS(ON)=3.3Ω @V_GS= 10V

· Qg(typ) = 8.5nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

MAXIMUM RATING (Ta=25℃)

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

SYMBOL

RATING

UNIT

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

600

±30

2.3

DPAK (1)

I_D

Drain Current

@T_C=100℃

1.46

I_DP

Pulsed (Note1)

KF3N60I

Single Pulsed Avalanche Energy

(Note 2)

E_AS

120

3.2

4.5

DIM MILLIMETERS

6.6 0.2

Repetitive Avalanche Energy

(Note 1)

E_AR

6.1 0.2

5.34 0.3

Peak Diode Recovery dv/dt

(Note 3)

0.7 0.2

dv/dt

V/ns

9.3 0.3

2.3 0.2

44.6

0.34

W/℃

℃

Tc=25℃

Drain Power

Dissipation

0.76 0.1

2.3 0.1

P_D

Derate above 25℃

0.5 0.1

T_j

Maximum Junction Temperature

Storage Temperature Range

150

1.8 0.2

0.5

0.1

T_stg

-55∼ 150

℃

1.0 0.1

0.96 MAX

Thermal Characteristics

1.02 0.3

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.8

℃/W

1. GATE

2. DRAIN

3. SOURCE

Thermal Resistance, Junction-to-

Ambient

110

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

IPAK(1)

2012. 7. 12

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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