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KF3N60I PDF预览

KF3N60I

更新时间: 2024-11-04 11:29:35
品牌 Logo 应用领域
KEC 晶体晶体管开关脉冲
页数 文件大小 规格书
6页 87K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N60I 技术参数

生命周期:Not Recommended包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:5.68Is Samacsys:N
雪崩能效等级(Eas):120 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):2.3 A
最大漏源导通电阻:3.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):7 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KF3N60I 数据手册

 浏览型号KF3N60I的Datasheet PDF文件第2页浏览型号KF3N60I的Datasheet PDF文件第3页浏览型号KF3N60I的Datasheet PDF文件第4页浏览型号KF3N60I的Datasheet PDF文件第5页浏览型号KF3N60I的Datasheet PDF文件第6页 
KF3N60D/I  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF3N60D  
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for electronic ballast and  
switching mode power supplies.  
A
C
K
DIM MILLIMETERS  
L
D
B
_
6.60 + 0.20  
A
B
C
D
E
_
6.10+0.20  
_
5.34 + 0.30  
_
0.70+0.20  
_
2.70 + 0.15  
FEATURES  
_
2.30+0.10  
F
· VDSS= 600V, ID= 2.3A  
0.96 MAX  
0.90 MAX  
G
H
J
H
· Drain-Source ON Resistance : RDS(ON)=3.3@VGS = 10V  
· Qg(typ) = 8.5nC  
J
_
1.80+0.20  
E
_
2.30+0.10  
K
L
G
N
_
0.50 + 0.10  
_
0.50+0.10  
F
F
M
M
N
0.70 MIN  
MAXIMUM RATING (Ta=25)  
1
2
3
1. GATE  
2. DRAIN  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
3. SOURCE  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
600  
±30  
2.3  
V
V
DPAK (1)  
ID  
Drain Current  
@TC=100℃  
1.46  
7*  
A
IDP  
Pulsed (Note1)  
KF3N60I  
Single Pulsed Avalanche Energy  
(Note 2)  
A
C
H
EAS  
120  
3.2  
4.5  
mJ  
mJ  
J
DIM MILLIMETERS  
_
6.6 0.2  
+
A
B
C
D
E
F
Repetitive Avalanche Energy  
(Note 1)  
EAR  
_
6.1 0.2  
+
_
5.34 0.3  
+
Peak Diode Recovery dv/dt  
(Note 3)  
_
0.7 0.2  
+
dv/dt  
V/ns  
_
9.3 0.3  
+
_
M
2.3 0.2  
+
73  
0.58  
W
W/℃  
Tc=25℃  
Drain Power  
Dissipation  
_
0.76 0.1  
+
PD  
G
H
J
P
N
_
2.3 0.1  
+
Derate above 25℃  
_
0.5 0.1  
+
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
_
K
L
M
N
P
1.8 0.2  
+
_
+
0.5  
0.1  
G
Tstg  
-55150  
_
1.0 0.1  
+
L
F
F
0.96 MAX  
_
Thermal Characteristics  
1.02 0.3  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
2.8  
/W  
/W  
1
2
3
1. GATE  
Thermal Resistance, Junction-to-  
Ambient  
62.5  
2. DRAIN  
3. SOURCE  
* : Drain current limited by maximum junction temperature.  
PIN CONNECTION  
IPAK(1)  
D
G
S
2010. 12. 20  
Revision No : 0  
1/6  

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