生命周期: | Not Recommended | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.68 | Is Samacsys: | N |
雪崩能效等级(Eas): | 120 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 2.3 A |
最大漏源导通电阻: | 3.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 7 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KF3N60P | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N60P/F | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N60P_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N60PF | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N80D | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N80D/I | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N80D_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N80DI | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N80F | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF3N80F_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |