KEM5001R

更新时间： 2024-11-20 03:47:47

品牌	Logo	应用领域
可天士 - KODENSHI		红外LED 光电二极管
页数	文件大小	规格书
2页	224K
描述
Infrared Emitting Diode(GaAlAs)

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中文翻译

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KEM5001R 数据手册

Infrared Emitting Diode(GaAlAs)

KEM5001R

The KEM5001R is GaAlAs infrared emitting diode

that is designed for high power, low forward voltage.

This device is optimized for speed and efficiency

at emission wavelength 870nm and has a high radiant

efficiency over a wide range of forward current.

[Unit : mm]

Dimensions

0.085

0.45

0.80

3.70±0.1

Features

2.60

870nm wavelength

* PIN Description

ANODE

Low forward voltage

CATHODE

High power and high reliability

Available for pulse operating

Surface Mountable Leadless Package

Applications

IR Audio and Telephone

IR Communication

Optical Switch

Available for Wireless Digital Data Transmission

[T_A= 25

]

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Power Dissipation

Forward Current

IFP

Pulse Forward Current *1

Reverse Voltage

Topr.

Tstg.

Tsol

-25~+85

-25~+100

260

Operating Temperature

Storage Temperature

Soldering Temperature^*2

*1. Duty ratio=1/100, pulse width=0.1ms

*2. MAX 5sec

[T_A= 25

Unit.

]

Electro-Optical Characteristics

Parameter

Symbol

Conditions

I_F=50㎃

Min.

Typ.

1.6

Max.

V_F

V_R

P_O

Forward Voltage

Reverse Voltage

Radiant intensity

Peak Emission Wavelength

Spectral Bandwidth 50%

Half Angle

1.9

I_R=10uA

I_F=50㎃

㎽/sr

I_F=20㎃

870

I_F=20㎃

I_F=30mA

I_F=50mA

±20

deg.

Θ_1/2

Rise Time

- 1 -

中文翻译

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