Datasheet > KDW258P

KDW258P

更新时间： 2024-11-18 05:40:51

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	62K
描述
P-Channel 1.8V Specified PowerTrench MOSFET

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中文翻译

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数据手册

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KDW258P 数据手册

SMD Type

ICIC

P-Channel 1.8V Specified PowerTrench MOSFET

KDW258P

TSSOP-8

Features

Unit: mm

-9 A, -12 V. RDS(ON) = 11m @ VGS = -4.5 V

RDS(ON) = 14m @ VGS =-2.5V

R^DS(ON)= 20m @ VGS =-1.8V

Rds ratings for use with 1.8 V logic

High performance trench technology for extremely low RDS(ON)

Low gate charge

1,5,8: Drain

2,3,6,7: Source

4: Gate

Low profile TSSOP-8 package

Absolute Maximum Ratings Ta = 25

Parameter

Drain to Source Voltage

Symbol

V^DSS

Rating

-12

Unit

Gate to Source Voltage

VGS

Drain Current Continuous (Note 1)

-9

I^D

Drain Current Pulsed

-50

Power Dissipation for Single Operation (Note 1a)

Power Dissipation for Single Operation (Note 1b)

Operating and Storage Temperature

Thermal Resistance Junction to Ambient (Note 1a)

Thermal Resistance Junction to Ambient (Note 1b)

1.3

0.6

T^J, TSTG

-55 to 150

114

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