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KCD32 PDF预览

KCD32

更新时间: 2024-11-25 12:33:59
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 62K
描述
For surface mounted applications, Low profile package

KCD32 数据手册

  
Product specification  
KCD32 THRU KCD310  
(SCD32 THRU SCD310)  
Unit: mm  
DO-214AC(SMA)  
Features  
3.93  
3.73  
4.597  
3.988  
1.575  
1.397  
For surface mounted applications.  
Low profile package.  
2.896  
1.67  
2.489 1.47  
1
2
Built-in strain relief.  
2.38  
2.18  
5.283  
4.775  
5.49  
5.29  
Metal silicon junction, majority carrier conduction.  
Low power loss, high efficiency.  
High current capability, low forward voltage drop.  
High surge capability.  
Recommended  
Land Pattern  
2.438  
1.981  
1.524  
0.762  
0.203  
0.051  
0.305  
0.152  
Absolute Maximum Ratings and Electrical Characteristics at 25  
Parameter  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
Symbol  
VRRM  
KCD32  
20  
KCD34  
40  
KCD36  
KCD310  
100  
Unit  
V
60  
42  
60  
VRMS  
14  
28  
70  
V
Maximum DC blocking voltage  
VDC  
I(AV)  
20  
40  
100  
V
3
Maximum average forward rectified current  
A
Peak forward surge current  
80  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
A
0.5  
20  
Maximum instantaneous forward voltage at 3.0A * 1  
VF  
IR  
0.7  
0.85  
V
0.5  
Maximum DC reverse current * 1 TA=25  
at rated DC blocking voltage TA=100  
mA  
10  
55  
17  
R
R
JA  
JL  
Typical thermal resistance  
/W  
-55 to +125  
-55 to +150  
Operating junction temperature range  
TJ  
-55 to +150  
Storage temperature range  
Tstg  
* 1. Pulse test: 300ms pulse width, 1% duty cycle.  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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