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KBU3510 PDF预览

KBU3510

更新时间: 2024-01-08 05:36:22
品牌 Logo 应用领域
CHENG-YI /
页数 文件大小 规格书
2页 126K
描述
SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS

KBU3510 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-W4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.66Samacsys Confidence:4
Samacsys Status:Released2D Presentation:https://componentsearchengine.com/2D/0T/767525.1.1.png
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=767525PCB Footprint:https://componentsearchengine.com/footprint.php?partID=767525
3D View:https://componentsearchengine.com/viewer/3D.php?partID=767525Samacsys PartID:767525
Samacsys Image:https://componentsearchengine.com/Images/9/KBU3510-G.jpgSamacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/KBU3510-G.jpg
Samacsys Pin Count:4Samacsys Part Category:Bridge Rectifier
Samacsys Package Category:OtherSamacsys Footprint Name:KBU2510-G-1
Samacsys Released Date:2019-10-30 21:30:55Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSFM-W4最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:35 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
最大重复峰值反向电压:1000 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

KBU3510 数据手册

 浏览型号KBU3510的Datasheet PDF文件第2页 
KBU 10A/15A/25A/35A SERIES  
SSIILLIICCOONN BBRRIIDDGGEE RREECCTTIIFFIIEERRSS  
GGLLAASSSS PPAASSSSIIVVAATTEEDD  
CCHHEENNGG--YYII  
BBRRIIDDGGEE RREECCTTIIFFIIEERRSS  
ELECTRONIC  
REVERSE VOLTAGE -50 to 1000 Volts  
FORWARD CURRENT -10/15/25/35 Amperes  
FEATURES  
Surge overload rating - 220~400 amperes peak  
Ideal for printed circuit board  
Reliable low cost construction utilizing  
molded plastic technique  
Plastic material has Underwriters Laboratory  
Flammability classification 94V-O  
Mounting Position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
0
Ratings at 25 C ambient temperature unless otherwise specified.  
Resistive or inductive load, 60 Hz.  
For capacitive load, derate current by 20%.  
KBU  
KBU  
1001  
1501  
2501  
3501  
100  
KBU  
1002  
1502  
2502  
3502  
200  
KBU  
1004  
1504  
2504  
3504  
400  
KBU  
1006  
1506  
2506  
3506  
600  
KBU  
1008  
1508  
2508  
3508  
800  
KBU  
1010  
1510  
2510  
3510  
1000  
700  
10005  
SYMBOL  
15005  
25005  
35005  
50  
UNITS  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
V
V
V
35  
70  
140  
280  
420  
560  
Maximum DC Blocking Voltage  
50  
100  
200  
400  
600  
800  
1000  
Maximum Average Forward (with heatsink Note 2)  
15.0  
3.2  
I(AV)  
A
0
Rectified Current @ T =100 C (without heatsink)  
C
220  
240  
300  
400  
10A  
Peak Forward Surge Current  
15A  
8.3 ms single half sine-wave  
25A  
IFSM  
A
super imposed on rated load (JEDEC Method)  
35A  
V
Maximum Forward Voltage at 7.5A DC  
1.05  
V
F
0
=25 C  
T
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@
10  
J
A
IR  
0
=125 C  
T
@
J
500  
2
2
2
A S  
I t Rating for fusing (t<8.3ms)  
240  
I t  
Typical Junction Capacitance  
per element (Note 1)  
C
J
F
P
60  
0
Typical Thermal Resistance (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
0.8  
R
JC  
TJ  
TSTG  
C/W  
0
-55 to +150  
-55 to +150  
C
0
C
NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Device mounted on 100mm x 100mm X 1.6mm Cu Plate Heatsink.  

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