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KBU2504-G PDF预览

KBU2504-G

更新时间: 2024-11-18 07:17:59
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管桥式整流二极管
页数 文件大小 规格书
3页 82K
描述
Silicon Bridge Rectifiers

KBU2504-G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSIP-W4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:2.31Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:400 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSIP-W4最大非重复峰值正向电流:400 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:400 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

KBU2504-G 数据手册

 浏览型号KBU2504-G的Datasheet PDF文件第2页浏览型号KBU2504-G的Datasheet PDF文件第3页 
Silicon Bridge Rectifiers  
KBU25005-G Thru. KBU2510-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 25.0A  
RoHS Device  
KBU  
Features  
-Surge overload rating - 400 amperes peak.  
-Ideal for printed circuit board.  
0.15ΦX23L  
(3.8ΦX5.7L)  
HOLE THRU  
0.157(4.0)*45°  
0.935(23.7)  
0.895(22.7)  
-Plastic material has U/L flammability  
300  
(7.5)  
classification 94V-0  
0.700(17.8)  
0.600(16.8)  
0.780(19.8)  
0.740(18.8)  
Mechanical Data  
-Case: Molded plastic, KBU  
1.00  
(25.4)  
MIN.  
-Mounting position: Any  
0.052(1.3)DIA.  
0.048(1.2)TYP.  
-Weight: 7.40grams  
.087(2.2)  
.071(1.8)  
0.220(5.6)  
0.180(4.6)  
0.276(7.0)  
0.256(6.5)  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
KBU  
25005-G  
KBU  
2501-G  
KBU  
2502-G  
KBU  
2504-G  
KBU  
2506-G  
KBU  
2508-G  
KBU  
2510-G  
Symbol  
Parameter  
Unit  
Maximum Reverse Peak Repetitive Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
V
DC  
100  
1000  
25.0  
3.6  
Maximum Average Forward (With heatsink Note1)  
Rectified Current @Tc=100°C (without hestsink)  
I
(AV)  
A
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
Super Imposed On Rated Load  
IFSM  
400  
Maximum Forward Voltage at 12.5A DC  
1.1  
VF  
V
@TJ=25°C  
@TJ=125°C  
10.0  
500  
Maximum Reverse Current  
At Rate DC Blocking Voltage  
μA  
IR  
Operating Temperature Range  
Storage Temperature Range  
Notes:  
-55 to +125  
-55 to +150  
°C  
°C  
T
J
TSTG  
1. Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.  
REV:A  
Page 1  
QW-BBR76  
Comchip Technology CO., LTD.  

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