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KBU1008G PDF预览

KBU1008G

更新时间: 2024-02-10 13:16:53
品牌 Logo 应用领域
WTE 二极管
页数 文件大小 规格书
3页 45K
描述
10A GLASS PASSIVATED BRIDGE RECTIFIER

KBU1008G 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PSFM-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.69
Is Samacsys:N其他特性:UL RECOGNIZED, HIGH RELIABILITY
最小击穿电压:800 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4湿度敏感等级:2
最大非重复峰值正向电流:300 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大重复峰值反向电压:800 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

KBU1008G 数据手册

 浏览型号KBU1008G的Datasheet PDF文件第2页浏览型号KBU1008G的Datasheet PDF文件第3页 
WTE  
PO WER SEM ICONDUCTORS  
KBU1000G – KBU1010G  
10A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
!
Glass Passivated Die Construction  
A
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
B
C
KBU  
Min  
D
Dim  
A
B
C
D
E
Max  
23.70  
4.10  
4.70  
2.20  
11.30  
6.80  
5.60  
22.70  
3.80  
4.20  
1.70  
10.30  
4.50  
4.60  
25.40  
K
L
-
~
~
+
E
G
H
J
J
G
Mechanical Data  
!
!
Case: Molded Plastic  
H
K
L
19.30  
17.80  
7.10  
5.20  
1.30  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 8.0 grams (approx.)  
Mounting Position: Any  
M
N
16.80  
6.60  
4.70  
1.20  
M
N
P
!
!
!
!
All Dimensions in mm  
Marking: Type Number  
P
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
Characteristic  
Symbol  
Unit  
1000G 1001G 1002G 1004G 1006G 1008G 1010G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
10  
V
A
Average Rectified Output Current  
@TA = 50°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
200  
A
Forward Voltage (per element)  
@IF = 5.0A  
VFM  
IR  
1.1  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 125°C  
5.0  
500  
µA  
°C  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
KBU1000G – KBU1010G  
1 of 3  
© 2002 Won-Top Electronics  

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