WTE
PO WER SEMICONDUCTORS
KBP150G – KBP1510G
1.5A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
!
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Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
L
A
KBP
Min
Dim
A
B
C
D
E
Max
15.24
11.68
—
B
J
14.22
10.67
15.2
4.57
3.60
2.16
0.76
1.52
11.68
12.7
+
~
~
-
5.08
4.10
2.67
0.86
—
C
K
Mechanical Data
!
!
G
H
I
Case: Molded Plastic
H
I
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Body
Weight: 1.7 grams (approx.)
Mounting Position: Any
J
12.7
—
E
K
L
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!
G
3.2 x 45° Typical
D
All Dimensions in mm
Marking: Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
KBP
150G
KBP
151G
KBP
152G
KBP
154G
KBP
156G
KBP
158G 1510G
KBP
Characteristic
Symbol
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.5
V
A
Average Rectified Output Current
(Note 1)
@TA = 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage (per element)
@IF = 1.5A
VFM
IRM
1.1
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
500
µA
Rating for Fusing (t<8.3ms)
I2t
Cj
10
15
A2s
pF
Typical Junction Capacitance per element (Note 2)
Typical Thermal Resistance (Note 3)
RꢀJA
Tj, TSTG
28
K/W
°C
Operating and Storage Temperature Range
-55 to +150
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm2 copper pad.
KBP150G – KBP1510G
1 of 3
© 2002 Won-Top Electronics