Datasheet > KBJ610GP

KBJ610GP

更新时间： 2024-01-21 21:48:51

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
1页	130K
描述
DIODE 2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, KBJ, 4 PIN, Bridge Rectifier Diode

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技术参数
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KBJ610GP 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	PLASTIC, KBJ, 4 PIN
针数：	4	Reach Compliance Code：	unknown
风险等级：	5.63	Is Samacsys：	N
Base Number Matches：	1

KBJ610GP 数据手册

M C C

KBJ6005G

THRU

KBJ610G

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

6.0 Amp Glass

Passivated Bridge

Rectifiers

•

Rating to 1000V PRV

Ideal for printed circuit board

Reliable low cost construction utilizing molded plastic technique

50 to 1000 Volts

Maximum Ratings

Operating Temperature: -55^OC to +150^OC

Storage Temperature: -55^OC to +150^OC

KBJ

•

Maximum

Recurrent

Maximum DC

Blocking

MCC

Maximum

Part Number Peak Reverse RMS Voltage

Voltage

KBJ6005G

KBJ601G

KBJ602G

KBJ604G

KBJ606G

KBJ608G

KBJ610G

50V

100V

200V

400V

600V

800V

1000V

35V

70V

50V

100V

200V

400V

600V

800V

1000V

140V

280V

420V

560V

700V

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Maximum Average

6.0 A

2.8 A

with heatsink ⁽¹⁾

without heatsink

Forward Rectified

Current @ T_C=110 ^OC

Peak Forward Surge

Current

Maximum Forward

Voltage

I_F(AV)

DIMENSIONS

I_FSM

V_F

170A

1.0V

8.3ms, half sine

INCHES

MIN MAX

.992

DIM

MIN

24.80

14.70

MAX

25.20

15.30

NOTE

I_FM= 3.0A;

.976

.579

T_A=25^OC

.602

.154

.173

.134

.122

.130

.035

.161

.189

.150

.134

.146

.043

3.90

4.40

3.40

3.10

3.30

0.90

4.10

4.80

3.80

3.40

3.70

1.10

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

5.0uA

500uA

T_J=25 ^OC

I_R

T_J=125 ^OC

I²t Rating for fusing

Typical Thermal

Resistance

I²t

120 A²S t< 8.0ms

1.5 ^OC/W Note 1

.059

.677

.287

.098

.024

.075

.700

.303

.114

.031

1.50

17.20

7.30

2.50

0.60

1.90

17.80

7.70

2.90

0.80

R_JC

Typical Junction

Capacitance

Measured at

F=1.0MHz

V_R=4.0V

Note 1:Unit Mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink

.366

.381

9.30

9.70

.118X45

3.0X45

C_J

80pF

.122

.134

3.10

3.40

www.mccsemi.com

Revision: 1

2003/09/16

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