Datasheet > KBJ6A

KBJ6A

更新时间： 2024-02-18 10:47:42

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
2页	757K
描述
Bridge Rectifier Diode, 6A, 50V V(RRM),

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技术参数
数据手册

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KBJ6A 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	R-PSFM-T4	Reach Compliance Code：	compliant
风险等级：	5.6	Is Samacsys：	N
最小击穿电压：	50 V	配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	BRIDGE RECTIFIER DIODE
最大正向电压 (VF)：	1 V	JESD-30 代码：	R-PSFM-T4
最大非重复峰值正向电流：	170 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	2.8 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大重复峰值反向电压：	50 V	子类别：	Bridge Rectifier Diodes
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

KBJ6A 数据手册

GBJ/KBJ6A thru GBJ/KBJ6M

Glass Passivated Single-Phase Bridge Rectifiers

Voltage Range 50 to 1000 Volts Forward Current 6.0 Amperes

Features

Rating to 1000V PRV

Ideal for printed circuit boards

Low forward voltage drop, high current capability

Reliable low cost construction ctilizing molded plastic technique

results in inexpensive product

The plastic material has Underwriters Laboratory Flammability

Classification 94V-0

Maximum Ratings and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

KBJ6A

KBJ6B

GBJ6B

KBJ6D

GBJ6D

KBJ6G

GBJ6G

KBJ6J

GBJ6J

KBJ6K

GBJ6K

KBJ6M

GBJ6M

Parameter

Symbols

Units

GBJ6A

Maximum recurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Volts

Maximum DC blocking voltage

100

1000

Maximum average forward

(with heatsink Note 2)

6.0

2.8

I_F(AV)

Amps

rectified output current @T_C=100^oC (without heatsink)

Peak forward surge current, 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

I_FSM

V_F

I_R

170.0

1.0

Amps

Volt

Max. instantaneous forward voltage drop at 3.0A DC

Maximum DC reverse current

@T_J=25^oC

5.0

500.0

at rated DC blocking voltage per element @T_J=125^oC

Rating for fusing (t<8.3ms)

I²t

C_J

120

A²sec

Typical junction capacitance per element (Note 1)

Typical thermal resistance (Note 2)

Operating temperature range

R_θJC

T_J

1.8

^oC/W

^oC

-55 to +150

Storage temperature range

T_STG

^oC

Notes:

1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC

2. Device mounted on 75mm x 75mm x 1.6mm Cu plate heatsink

636

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