Datasheet > K9XXG16UXM-E

K9XXG16UXM-E

更新时间： 2024-11-20 22:10:47

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
39页	679K
描述
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

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K9XXG16UXM-E 数据手册

K9W4G08U1M

K9K2G08Q0M

K9K2G08U0M

K9W4G16U1M

K9K2G16Q0M

K9K2G16U0M

FLASH MEMORY

Document Title

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Aug. 30.2001

Nov. 5.2001

Remark

0.0

0.1

1. Initial issue

Advance

1. IOL(R/B) of 1.8V device is changed.

-min. Value: 7mA -->3mA

-typ. Value: 8mA -->4mA

0.2

Jan. 23. 2002

1. 5th cycle of ID is changed

: 40h --> 44h

0.3

0.4

0.5

May.29.2002

Aug.13.2002

Aug. 22.2002

1. Add WSOP Package Dimensions.

1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package

1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .

- min. 4016 --> 4036

0.6

Nov. 07.2002

1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30

invalid blocks.

2. K9W4GXXU1M’s ID is changed

(Before)

Device

K9W4G08U1M

K9W4G16U1M

(After)

2nd Cycle 3rd cycle 4th Cycle 5th Cycle

DCh

CCh

15h

55h

4Ch

Device

2nd Cycle 3rd cycle 4th Cycle 5th Cycle

K9W4G08U1M

K9W4G16U1M

DAh

CAh

15h

55h

44h

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)

2. Add the data protection Vcc guidence for 1.8V device - below about 1.1V.

(Page 37)

0.7

0.8

Nov. 22.2002

Mar. 6.2003

The min. Vcc value 1.8V devices is changed.

K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near your office.

12 3 4 5 6 7...39

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