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K9WAG08U1B-PIB00 PDF预览

K9WAG08U1B-PIB00

更新时间: 2024-11-21 20:51:11
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管内存集成电路
页数 文件大小 规格书
48页 1191K
描述
Flash, 2GX8, 25ns, PDSO48, TSOP1-48

K9WAG08U1B-PIB00 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSOP1-48Reach Compliance Code:unknown
风险等级:5.78最长访问时间:25 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48长度:18.4 mm
内存密度:17179869184 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:16K端子数量:48
字数:2147483648 words字数代码:2000000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2GX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP48,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE页面大小:2K words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1.2 mm部门规模:128K
最大待机电流:0.0002 A子类别:Flash Memories
最大压摆率:0.035 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

K9WAG08U1B-PIB00 数据手册

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Advance  
FLASH MEMORY  
K9K8G08U0B  
K9WAG08U1B  
K9K8G08U0B  
K9WAG08U1B  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
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1

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