Datasheet > K9K2G08Q0M

K9K2G08Q0M

更新时间： 2024-11-30 22:26:03

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
40页	637K
描述
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

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K9K2G08Q0M 数据手册

K9W4G08U1M

K9K2G08Q0M

K9K2G08U0M

K9W4G16U1M

K9K2G16Q0M

K9K2G16U0M

FLASH MEMORY

Document Title

256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Aug. 30.2001

Nov. 5. 2001

Remark

Advance

0.0

0.1

1. Initial issue

1. IOL(R/B) of 1.8V device is changed.

-min. Value: 7mA -->3mA

Preliminary

-typ. Value: 8mA -->4mA

Jan. 23. 2002

May. 29. 2002

Preliminary

0.2

1. 5th cycle of ID is changed

: 40h --> 44h

0.3

0.4

0.5

1. Add WSOP Package Dimensions.

Aug. 13. 2 002 Preliminary

1. Add two-K9K2GXXU0M-YCB0/YIB0 Stacked Package

Aug. 22. 2002

Nov. 07. 2002

Preliminary

1. Min valid block of K9W4GXXU1M-YCB0/YIB0 is changed .

- min. 4016 --> 4036

1. Each K9K2GXXX0M chip in the K9W4GXXU1M has Maximum 30

0.6

invalid blocks.

2. K9W4GXXU1M’s ID is changed

(Before)

Device

K9W4G08U1M

K9W4G16U1M

(After)

2nd Cycle 3rd cycle 4th Cycle 5th Cycle

DCh

CCh

15h

55h

4Ch

Device

2nd Cycle 3rd cycle 4th Cycle 5th Cycle

K9W4G08U1M

K9W4G16U1M

DAh

CAh

15h

55h

44h

Nov. 22. 2002

Mar. 6. 2003

Preliminary

1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)

2. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 37)

0.7

0.8

1. The min. Vcc value 1.8V devices is changed.

K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

12 3 4 5 6 7...40

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与K9K2G08Q0M相关器件

型号	品牌	获取价格	描述	数据表
K9K2G08Q0M-P	SAMSUNG	获取价格	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PCB0	SAMSUNG	获取价格	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PIB0	SAMSUNG	获取价格	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-PIB00	SAMSUNG	获取价格	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
K9K2G08Q0M-Y	SAMSUNG	获取价格	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YCB0	SAMSUNG	获取价格	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YCB00	SAMSUNG	获取价格	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9K2G08Q0M-YIB0	SAMSUNG	获取价格	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08Q0M-YIB00	SAMSUNG	获取价格	Flash, 256MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9K2G08R0A	SAMSUNG	获取价格	FLASH MEMORY