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K9F8008W0M-

更新时间: 2024-09-29 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
25页 444K
描述
1M x 8 bit NAND Flash Memory

K9F8008W0M- 数据手册

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K9F8008W0M-TCB0, K9F8008W0M-TIB0  
FLASH MEMORY  
Document Title  
1M x 8 bit NAND Flash Memory  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.0  
1.0  
Data Sheet 1997  
April 10th 1997  
April 10th 1998  
Advance  
Data Sheet 1998  
Preliminary  
1. Changed tBERS parameter : 5ms(Typ.) ® 2ms(Typ.)  
10ms(Max.) ® 4ms(Max.)  
2. Changed tPROG parameter : 1.5ms(Max.) ® 1.0ms(Max.)  
1.1  
July 14th 1998  
Final  
Data sheet 1998  
1. Cjanged DC and Operating Characteristics  
Vcc=2.7V~3.6V  
Vcc=3.6V~5.5V  
Typ Max  
Parameter  
Unit  
Typ  
Max  
Burst Read  
10 ® 5  
10 ® 5  
10 ® 5  
20 ® 10 15 ® 10 30 ® 20  
20 ® 10 15 ® 10 30 ® 20  
20 ® 10 15 ® 10 30 ® 20  
Operating  
Current  
mA  
Program  
Eraase  
Stand-by Current (CMOS) 5 ® 10  
50  
10  
-
100 ® 50  
10 ® ±10  
10 ® ±10  
mA  
Input Leakage Current  
Output Leakage Current  
-
-
10 ® ±10  
10 ® ±10  
-
1.2  
April 10th 1999  
Final  
Data Sheet 1999  
1) Added CE dont’ care mode during the data-loading and reading  
1) Revised real-time map-out algorithm(refer to technical notes)  
1.3  
1.4  
July 23th 1999  
Sep. 15th 1999  
Final  
Final  
Changed device name  
- KM29W8000T -> K9F8008W0M-TCB0  
- KM29W8000IT -> K9F8008W0M-TIB0  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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