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K9F8008W0M-TCB0 PDF预览

K9F8008W0M-TCB0

更新时间: 2024-09-29 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
25页 444K
描述
1M x 8 bit NAND Flash Memory

K9F8008W0M-TCB0 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP40/44,.46,32
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.89最长访问时间:45 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G40JESD-609代码:e0
长度:18.41 mm内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:256
端子数量:40字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP40/44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:256 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:4K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:10.16 mm
Base Number Matches:1

K9F8008W0M-TCB0 数据手册

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K9F8008W0M-TCB0, K9F8008W0M-TIB0  
FLASH MEMORY  
Document Title  
1M x 8 bit NAND Flash Memory  
Revision History  
Revision No.  
History  
Draft Date  
Remark  
0.0  
1.0  
Data Sheet 1997  
April 10th 1997  
April 10th 1998  
Advance  
Data Sheet 1998  
Preliminary  
1. Changed tBERS parameter : 5ms(Typ.) ® 2ms(Typ.)  
10ms(Max.) ® 4ms(Max.)  
2. Changed tPROG parameter : 1.5ms(Max.) ® 1.0ms(Max.)  
1.1  
July 14th 1998  
Final  
Data sheet 1998  
1. Cjanged DC and Operating Characteristics  
Vcc=2.7V~3.6V  
Vcc=3.6V~5.5V  
Typ Max  
Parameter  
Unit  
Typ  
Max  
Burst Read  
10 ® 5  
10 ® 5  
10 ® 5  
20 ® 10 15 ® 10 30 ® 20  
20 ® 10 15 ® 10 30 ® 20  
20 ® 10 15 ® 10 30 ® 20  
Operating  
Current  
mA  
Program  
Eraase  
Stand-by Current (CMOS) 5 ® 10  
50  
10  
-
100 ® 50  
10 ® ±10  
10 ® ±10  
mA  
Input Leakage Current  
Output Leakage Current  
-
-
10 ® ±10  
10 ® ±10  
-
1.2  
April 10th 1999  
Final  
Data Sheet 1999  
1) Added CE dont’ care mode during the data-loading and reading  
1) Revised real-time map-out algorithm(refer to technical notes)  
1.3  
1.4  
July 23th 1999  
Sep. 15th 1999  
Final  
Final  
Changed device name  
- KM29W8000T -> K9F8008W0M-TCB0  
- KM29W8000IT -> K9F8008W0M-TIB0  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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Preliminary FLASH MEMORY